Novel precursor-derived Al–C–N–(O)-based ceramic additive for the low-temperature pressureless sintering of silicon nitride

A polymer, which by pyrolysis transforms into Al–C–N–(O) ceramics, was synthesized from trimethylamine alane and cyan amide, and its applicability as a sintering additive for Si3N4 was investigated. Si3N4 powders were mixed with the precursor by treatment with organic slurries of the precursor to induce the homogeneous distribution of the additive. The green-bodies were pretreated in air or NH3 at 800 °C to control the chemical composition of the additive, through which the densification of Si3N4 could be improved. Dense samples with very fine grains (<2 μm) were obtained after sintering at 1600 °C in 0.1 MPa N2. Besides silicon nitride, submicrometer silicon carbide particles were observed in the samples, indicating that this procedure (i.e., the use of this novel sintering additive) also allows for the fabrication of SiC–Si3N4 composites.

Dielectrics for GaN Based MIS-Diodes

GaN MIS diodes were demonstrated utilizing AIN and Ga2O3(Gd2O3) as insulators. A 345 Åof AIN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga2O3(Gd2O3) growth, a multi-MBE chamber was used and a 195 Å oxide is E-beam evaporated from a single crystal source of Ga5Gd3O12. The forward breakdown voltage of AlN and Ga2O3( Gd2O3) diodes are 5V and 6V, respectively, which are significantly improved from ˜1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from ccumulation to depletion at different frequencies. The insulator/GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.