Growth and characterization of Fe‐doped semi‐insulating InP prepared by low‐pressure organometallic vapor phase epitaxy with tertiarybutylphosphine

Rong‐Ting Huang; Ami Appelbaum; Daniel Renner; Wally Burke; Stanley W. Zehr

doi:10.1063/1.347467

Growth and characterization of Fe‐doped semi‐insulating InP prepared by low‐pressure organometallic vapor phase epitaxy with tertiarybutylphosphine

Journal of Applied Physics ◽

10.1063/1.347467 ◽

1991 ◽

Vol 69 (12) ◽

pp. 8139-8144 ◽

Cited By ~ 12

Author(s):

Rong‐Ting Huang ◽

Ami Appelbaum ◽

Daniel Renner ◽

Wally Burke ◽

Stanley W. Zehr

Keyword(s):

Vapor Phase ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Electrical characterization of AlxGa1−xAs grown by low‐pressure organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor

Applied Physics Letters ◽

10.1063/1.113128 ◽

1995 ◽

Vol 66 (2) ◽

pp. 183-185 ◽

Cited By ~ 1

Author(s):

Nicholas G. Paraskevopoulos ◽

Sigrid R. McAfee ◽

William S. Hobson

Keyword(s):

Vapor Phase ◽

Electrical Characterization ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Trimethylamine Alane ◽

Aluminum Precursor

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Characterization of InP/GaAs epilayers grown on Si substrates by low‐pressure organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.99260 ◽

1988 ◽

Vol 52 (11) ◽

pp. 880-882 ◽

Cited By ~ 11

Author(s):

M. K. Lee ◽

D. S. Wuu ◽

H. H. Tung ◽

K. Y. Yu ◽

K. C. Huang

Keyword(s):

Vapor Phase ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Si Substrates

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X-ray characterization of composition and relaxation of AlxGa1−xN(0≤x≤1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.3457149 ◽

2010 ◽

Vol 108 (4) ◽

pp. 043526 ◽

Cited By ~ 20

Author(s):

James Tweedie ◽

Ramon Collazo ◽

Anthony Rice ◽

Jinqiao Xie ◽

Seiji Mita ◽

...

Keyword(s):

Vapor Phase ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

X Ray

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Optimization of selective area growth of GaAs by low pressure organometallic vapor phase epitaxy for monolithic integrated circuits

Journal of Electronic Materials ◽

10.1007/bf02655263 ◽

1994 ◽

Vol 23 (2) ◽

pp. 159-166 ◽

Cited By ~ 2

Author(s):

H. Kanber ◽

S. X. Bar ◽

P. E. Norris ◽

C. Beckham ◽

M. Pacer

Keyword(s):

Integrated Circuits ◽

Vapor Phase ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Organometallic Vapor Phase Epitaxy ◽

Selective Area ◽

Monolithic Integrated Circuits ◽

Area Growth

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Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-021-08832-9 ◽

2021 ◽

Author(s):

Hongyu Peng ◽

Tuerxun Ailihumaer ◽

Yafei Liu ◽

Kim Kisslinger ◽

Xiao Tong ◽

...

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy

Journal of Electronic Materials ◽

10.1007/bf02673347 ◽

1990 ◽

Vol 19 (11) ◽

pp. 1313-1317 ◽

Cited By ~ 18

Author(s):

Rong -Ting Huang ◽

Ching -Long Jiang ◽

Ami Appelbaum ◽

Daniel Renner ◽

Stanley W. Zehr

Keyword(s):

Vapor Phase ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Selective Growth ◽

Organometallic Vapor Phase Epitaxy ◽

Inp Substrates

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Self-assembled InGaAs dots grown on GaP (001) substrate by low-pressure organometallic vapor phase epitaxy

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(00)00076-x ◽

2000 ◽

Vol 7 (3-4) ◽

pp. 855-859 ◽

Cited By ~ 4

Author(s):

S Fuchi ◽

Y Nonogaki ◽

H Moriya ◽

A Koizumi ◽

Y Fujiwara ◽

...

Keyword(s):

Vapor Phase ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Self Assembled

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Low-pressure metallorganic vapor-phase epitaxy (LP-MOVPE) growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates

10.1117/12.175778 ◽

1994 ◽

Author(s):

A. Lindner ◽

Q. Liu ◽

F. Scheffer ◽

W. Prost ◽

Franz-Josef Tegude

Keyword(s):

Vapor Phase ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Strained Layer ◽

Short Period ◽

Movpe Growth ◽

Strained Layer Superlattices ◽

Inp Substrates

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Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor Phase Epitaxy

ECS Meeting Abstracts ◽

10.1149/ma2020-02261836mtgabs ◽

2020 ◽

Vol MA2020-02 (26) ◽

pp. 1836-1836

Author(s):

Hongyu Peng ◽

Tuerxun Ailihumaer ◽

Yafei Liu ◽

Balaji Raghothamachar ◽

Michael Dudley

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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AlGaAs/GaAs double‐heterojunction high electron mobility transistors grown by low‐pressure organometallic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.345244 ◽

1990 ◽

Vol 67 (1) ◽

pp. 550-552 ◽

Cited By ~ 3

Author(s):

Rong‐Ting Huang ◽

Yung‐Yi Tu ◽

Dumrong Kasemset ◽

N. Nouri ◽

C. Colvard ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

High Electron ◽

Organometallic Vapor Phase Epitaxy ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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