Electrical Characterization of Ruthenium-Doped InP Grown by Low Pressure Hydride Vapor Phase Epitaxy

2001 ◽  
Vol 4 (6) ◽  
pp. G53 ◽  
Author(s):  
D. Söderström ◽  
S. Lourdudoss ◽  
M. Wallnäs ◽  
A. Dadgar ◽  
O. Stenzel ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Electrical Characterization ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
T. Ishiguro ◽  
Y. Kobori ◽  
Y. Nagawa ◽  
Y. Iwamura ◽  
S. Yamaguchi
Keyword(s):  
Crystal Growth ◽  
Vapor Phase ◽  
Gaas Substrate ◽  
Electrical Characterization ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Carrier Gases

ABSTRACTInSb1-xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen was incorporated into InSb1-xNx up to 0.24.

Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

2007 ◽  
Vol 253 (18) ◽  
pp. 7423-7428 ◽  
Author(s):  
T.B. Wei ◽  
R.F. Duan ◽  
J.X. Wang ◽  
J.M. Li ◽  
Z.Q. Huo ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

Growth and characterization of low defect GaN by hydride vapor phase epitaxy

2002 ◽  
Vol 246 (3-4) ◽  
pp. 223-229 ◽  
Author(s):  
Xueping Xu ◽  
R.P Vaudo ◽  
C Loria ◽  
A Salant ◽  
G.R Brandes ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy

2011 ◽  
Vol 5 (1) ◽  
pp. 011001 ◽  
Author(s):  
Henryk Teisseyre ◽  
Jaroslaw Zbigniew Domagala ◽  
Boleslaw Lucznik ◽  
Anna Reszka ◽  
Bogdan Jerzy Kowalski ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Nonpolar Gan

Polishing and characterization of thick AlN layers grown on SiC substrates by stress control hydride vapor phase epitaxy

2006 ◽  
Vol 3 (6) ◽  
pp. 1448-1452 ◽  
Author(s):  
H. Mank ◽  
B. Amstatt ◽  
D. Turover ◽  
E. Bellet-Amalric ◽  
B. Daudin ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Stress Control

Characterization of a freestanding AlN substrate prepared by hydride vapor phase epitaxy

2008 ◽  
Vol 5 (6) ◽  
pp. 1512-1514 ◽  
Author(s):  
Y. Kumagai ◽  
T. Nagashima ◽  
H. Murakami ◽  
K. Takada ◽  
A. Koukitu
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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