Charge trapping and device degradation induced by x‐ray irradiation in metal‐oxide‐semiconductor field‐effect transistors

S. A. Campbell; K. H. Lee; H. H. Li; R. Nachman; F. Cerrina

doi:10.1063/1.110723

Charge trapping and device degradation induced by x‐ray irradiation in metal‐oxide‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.110723 ◽

1993 ◽

Vol 63 (12) ◽

pp. 1646-1647 ◽

Cited By ~ 3

Author(s):

S. A. Campbell ◽

K. H. Lee ◽

H. H. Li ◽

R. Nachman ◽

F. Cerrina

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray

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X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

Rare Metals ◽

10.1007/s12598-020-01586-z ◽

2020 ◽

Author(s):

Yu-Dong Li ◽

Qing-Zhu Zhang ◽

Fan-Yu Liu ◽

Zhao-Hao Zhang ◽

Feng-Yuan Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

X Ray

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Erratum: “Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors” [Appl. Phys. Lett. 106, 103109 (2015)]

Applied Physics Letters ◽

10.1063/1.4952406 ◽

2016 ◽

Vol 108 (20) ◽

pp. 209902 ◽

Cited By ~ 2

Author(s):

Yao Guo ◽

Xianlong Wei ◽

Jiapei Shu ◽

Bo Liu ◽

Jianbo Yin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment

Journal of Applied Physics ◽

10.1063/1.366007 ◽

1997 ◽

Vol 82 (4) ◽

pp. 1947-1950 ◽

Cited By ~ 2

Author(s):

P. T. Lai ◽

J. P. Xu ◽

H. B. Lo ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Characterization of the electrical bias induced strain variation in metal–oxide–semiconductor field effect transistors using x‐ray double crystal topography

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578195 ◽

1992 ◽

Vol 10 (4) ◽

pp. 1012-1019

Author(s):

David I Ma ◽

Syed B. Qadri ◽

Martin C. Peckerar ◽

Daniel McCarthy

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strain Variation ◽

Double Crystal ◽

X Ray ◽

Electrical Bias

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In-operando x-ray topography analysis of SiC metal–oxide–semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations

Journal of Applied Physics ◽

10.1063/5.0063082 ◽

2021 ◽

Vol 130 (14) ◽

pp. 145703

Author(s):

Kumiko Konishi ◽

Ryusei Fujita ◽

Keisuke Kobayashi ◽

Akio Yoneyama ◽

Kotaro Ishiji ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Stacking Fault ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

In Operando ◽

Topography Analysis

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High performance self-aligned sub-100 nm metal–oxide-semiconductor field-effect transistors using x-ray lithography

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587428 ◽

1994 ◽

Vol 12 (6) ◽

pp. 4051 ◽

Cited By ~ 8

Author(s):

Isabel Y. Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray

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Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2939272 ◽

2008 ◽

Vol 103 (12) ◽

pp. 123707 ◽

Cited By ~ 16

Author(s):

Enrico Prati ◽

Marco Fanciulli ◽

Giorgio Ferrari ◽

Marco Sampietro

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Single Charge ◽

Random Telegraph Signal

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Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

Applied Physics Letters ◽

10.1063/1.4826918 ◽

2013 ◽

Vol 103 (18) ◽

pp. 183502 ◽

Cited By ~ 4

Author(s):

Weichun Luo ◽

Hong Yang ◽

Wenwu Wang ◽

Lichuan Zhao ◽

Hao Xu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Hot Carrier ◽

Physical Understanding ◽

High K

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Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

Applied Physics Letters ◽

10.1063/1.3697644 ◽

2012 ◽

Vol 100 (15) ◽

pp. 152102 ◽

Cited By ~ 11

Author(s):

Wen-Hung Lo ◽

Ting-Chang Chang ◽

Jyun-Yu Tsai ◽

Chih-Hao Dai ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress

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Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.1874312 ◽

2005 ◽

Vol 86 (9) ◽

pp. 093510 ◽

Cited By ~ 17

Author(s):

C. Shen ◽

M. F. Li ◽

H. Y. Yu ◽

X. P. Wang ◽

Y.-C. Yeo ◽

...

Keyword(s):

Metal Oxide ◽

Physical Model ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Dependent ◽

Dynamic Charge

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