Erratum: “Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors” [Appl. Phys. Lett. 106, 103109 (2015)]

Yao Guo; Xianlong Wei; Jiapei Shu; Bo Liu; Jianbo Yin; Changrong Guan; Yuxiang Han; Song Gao; Qing Chen

doi:10.1063/1.4952406

Erratum: “Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors” [Appl. Phys. Lett. 106, 103109 (2015)]

Applied Physics Letters ◽

10.1063/1.4952406 ◽

2016 ◽

Vol 108 (20) ◽

pp. 209902 ◽

Cited By ~ 2

Author(s):

Yao Guo ◽

Xianlong Wei ◽

Jiapei Shu ◽

Bo Liu ◽

Jianbo Yin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment

Journal of Applied Physics ◽

10.1063/1.366007 ◽

1997 ◽

Vol 82 (4) ◽

pp. 1947-1950 ◽

Cited By ~ 2

Author(s):

P. T. Lai ◽

J. P. Xu ◽

H. B. Lo ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Charge trapping and device degradation induced by x‐ray irradiation in metal‐oxide‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.110723 ◽

1993 ◽

Vol 63 (12) ◽

pp. 1646-1647 ◽

Cited By ~ 3

Author(s):

S. A. Campbell ◽

K. H. Lee ◽

H. H. Li ◽

R. Nachman ◽

F. Cerrina

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray

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Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2939272 ◽

2008 ◽

Vol 103 (12) ◽

pp. 123707 ◽

Cited By ~ 16

Author(s):

Enrico Prati ◽

Marco Fanciulli ◽

Giorgio Ferrari ◽

Marco Sampietro

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Single Charge ◽

Random Telegraph Signal

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Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

Applied Physics Letters ◽

10.1063/1.4826918 ◽

2013 ◽

Vol 103 (18) ◽

pp. 183502 ◽

Cited By ~ 4

Author(s):

Weichun Luo ◽

Hong Yang ◽

Wenwu Wang ◽

Lichuan Zhao ◽

Hao Xu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Hot Carrier ◽

Physical Understanding ◽

High K

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Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

Applied Physics Letters ◽

10.1063/1.3697644 ◽

2012 ◽

Vol 100 (15) ◽

pp. 152102 ◽

Cited By ~ 11

Author(s):

Wen-Hung Lo ◽

Ting-Chang Chang ◽

Jyun-Yu Tsai ◽

Chih-Hao Dai ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress

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Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.1874312 ◽

2005 ◽

Vol 86 (9) ◽

pp. 093510 ◽

Cited By ~ 17

Author(s):

C. Shen ◽

M. F. Li ◽

H. Y. Yu ◽

X. P. Wang ◽

Y.-C. Yeo ◽

...

Keyword(s):

Metal Oxide ◽

Physical Model ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Dependent ◽

Dynamic Charge

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Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.4914968 ◽

2015 ◽

Vol 106 (10) ◽

pp. 103109 ◽

Cited By ~ 101

Author(s):

Yao Guo ◽

Xianlong Wei ◽

Jiapei Shu ◽

Bo Liu ◽

Jianbo Yin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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