Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric

C. Shen; M. F. Li; H. Y. Yu; X. P. Wang; Y.-C. Yeo; D. S. H. Chan; D.-L. Kwong

doi:10.1063/1.1874312

Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.1874312 ◽

2005 ◽

Vol 86 (9) ◽

pp. 093510 ◽

Cited By ~ 17

Author(s):

C. Shen ◽

M. F. Li ◽

H. Y. Yu ◽

X. P. Wang ◽

Y.-C. Yeo ◽

...

Keyword(s):

Metal Oxide ◽

Physical Model ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Dependent ◽

Dynamic Charge

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Negative transconductance effect in metal oxide semiconductor field effect transistors fabricated with Ta/sub 2/O/sub 5/ gate dielectric

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904206 ◽

2002 ◽

Author(s):

B.C.M. Lai ◽

J.Y.M. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Off‐state leakage currents in n‐channel metal‐oxide‐semiconductor field‐effect transistors with 10‐nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric

Applied Physics Letters ◽

10.1063/1.105826 ◽

1991 ◽

Vol 59 (23) ◽

pp. 3006-3008 ◽

Cited By ~ 5

Author(s):

S. Fleischer ◽

Z. H. Liu ◽

P. T. Lai ◽

P. K. Ko ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Leakage Currents

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Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.2943186 ◽

2008 ◽

Vol 92 (25) ◽

pp. 253506 ◽

Cited By ~ 22

Author(s):

Han Zhao ◽

Davood Shahrjerdi ◽

Feng Zhu ◽

Hyoung-Sub Kim ◽

Injo OK ◽

...

Keyword(s):

Indium Phosphide ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness

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Energy distribution of interface traps in germanium metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility

Applied Physics Letters ◽

10.1063/1.2976632 ◽

2008 ◽

Vol 93 (8) ◽

pp. 083510 ◽

Cited By ~ 9

Author(s):

Ruilong Xie ◽

Nan Wu ◽

Chen Shen ◽

Chunxiang Zhu

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps

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Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

Applied Physics Letters ◽

10.1063/1.3148830 ◽

2009 ◽

Vol 94 (22) ◽

pp. 223512 ◽

Cited By ~ 59

Author(s):

P. Kordoš ◽

R. Stoklas ◽

D. Gregušová ◽

J. Novák

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Dependent

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GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2738480 ◽

2007 ◽

Vol 25 (3) ◽

pp. 1024 ◽

Cited By ~ 8

Author(s):

M. Holland ◽

C. R. Stanley ◽

W. Reid ◽

I. Thayne ◽

G. W. Paterson ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal–Oxide–Semiconductor Inverter at Elevated Temperature

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc13 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC13

Author(s):

Nam-Hyun Lee ◽

Hyung-wook Kim ◽

Bongkoo Kang

Keyword(s):

Elevated Temperature ◽

Metal Oxide ◽

Field Effect ◽

Dynamic Stress ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Steep Subthreshold Swing Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Nonlinear Gate Dielectric Insulators

10.7567/ssdm.2015.k-1-3 ◽

2015 ◽

Cited By ~ 1

Author(s):

H. Ota ◽

S. Migita ◽

K. Fukuda ◽

A. Toriumi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor

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Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2937117 ◽

2008 ◽

Vol 92 (23) ◽

pp. 233508 ◽

Cited By ~ 21

Author(s):

Han Zhao ◽

Davood Shahrjerdi ◽

Feng Zhu ◽

Manhong Zhang ◽

Hyoung-Sub Kim ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Al2o3 Gate Dielectric

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