In-operando x-ray topography analysis of SiC metal–oxide–semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations

Kumiko Konishi; Ryusei Fujita; Keisuke Kobayashi; Akio Yoneyama; Kotaro Ishiji; Hiroyuki Okino; Akio Shima; Toru Ujihara

doi:10.1063/5.0063082

In-operando x-ray topography analysis of SiC metal–oxide–semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations

Journal of Applied Physics ◽

10.1063/5.0063082 ◽

2021 ◽

Vol 130 (14) ◽

pp. 145703

Author(s):

Kumiko Konishi ◽

Ryusei Fujita ◽

Keisuke Kobayashi ◽

Akio Yoneyama ◽

Kotaro Ishiji ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Stacking Fault ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

In Operando ◽

Topography Analysis

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X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

Rare Metals ◽

10.1007/s12598-020-01586-z ◽

2020 ◽

Author(s):

Yu-Dong Li ◽

Qing-Zhu Zhang ◽

Fan-Yu Liu ◽

Zhao-Hao Zhang ◽

Feng-Yuan Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

X Ray

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Unique method to electrically characterize a single stacking fault in silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1331641 ◽

2000 ◽

Vol 77 (24) ◽

pp. 4034-4036 ◽

Cited By ~ 15

Author(s):

J. Yang ◽

G. W. Neudeck ◽

J. P. Denton

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Stacking Fault ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Unique Method

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Characterization of the electrical bias induced strain variation in metal–oxide–semiconductor field effect transistors using x‐ray double crystal topography

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578195 ◽

1992 ◽

Vol 10 (4) ◽

pp. 1012-1019

Author(s):

David I Ma ◽

Syed B. Qadri ◽

Martin C. Peckerar ◽

Daniel McCarthy

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strain Variation ◽

Double Crystal ◽

X Ray ◽

Electrical Bias

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Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1417995 ◽

2002 ◽

Vol 91 (1) ◽

pp. 420 ◽

Cited By ~ 11

Author(s):

Jianan Yang ◽

Gerold W. Neudeck ◽

John P. Denton

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Stacking Fault ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Thin Film Silicon

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Charge trapping and device degradation induced by x‐ray irradiation in metal‐oxide‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.110723 ◽

1993 ◽

Vol 63 (12) ◽

pp. 1646-1647 ◽

Cited By ~ 3

Author(s):

S. A. Campbell ◽

K. H. Lee ◽

H. H. Li ◽

R. Nachman ◽

F. Cerrina

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray

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High performance self-aligned sub-100 nm metal–oxide-semiconductor field-effect transistors using x-ray lithography

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587428 ◽

1994 ◽

Vol 12 (6) ◽

pp. 4051 ◽

Cited By ~ 8

Author(s):

Isabel Y. Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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