Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors

Enrico Prati; Marco Fanciulli; Giorgio Ferrari; Marco Sampietro

doi:10.1063/1.2939272

Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2939272 ◽

2008 ◽

Vol 103 (12) ◽

pp. 123707 ◽

Cited By ~ 16

Author(s):

Enrico Prati ◽

Marco Fanciulli ◽

Giorgio Ferrari ◽

Marco Sampietro

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Single Charge ◽

Random Telegraph Signal

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Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.366200 ◽

1997 ◽

Vol 82 (9) ◽

pp. 4621-4628 ◽

Cited By ~ 13

Author(s):

A. Godoy ◽

F. Gámiz ◽

A. Palma ◽

J. A. Jiménez-Tejada ◽

J. Banqueri ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Signal Amplitude ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signal ◽

Mobility Fluctuations

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Erratum: “Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors” [Appl. Phys. Lett. 106, 103109 (2015)]

Applied Physics Letters ◽

10.1063/1.4952406 ◽

2016 ◽

Vol 108 (20) ◽

pp. 209902 ◽

Cited By ~ 2

Author(s):

Yao Guo ◽

Xianlong Wei ◽

Jiapei Shu ◽

Bo Liu ◽

Jianbo Yin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment

Journal of Applied Physics ◽

10.1063/1.366007 ◽

1997 ◽

Vol 82 (4) ◽

pp. 1947-1950 ◽

Cited By ~ 2

Author(s):

P. T. Lai ◽

J. P. Xu ◽

H. B. Lo ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Charge trapping and device degradation induced by x‐ray irradiation in metal‐oxide‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.110723 ◽

1993 ◽

Vol 63 (12) ◽

pp. 1646-1647 ◽

Cited By ~ 3

Author(s):

S. A. Campbell ◽

K. H. Lee ◽

H. H. Li ◽

R. Nachman ◽

F. Cerrina

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray

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Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.118943 ◽

1997 ◽

Vol 70 (16) ◽

pp. 2153-2155 ◽

Cited By ~ 9

Author(s):

A. Godoy ◽

F. Gámiz ◽

A. Palma ◽

J. A. Jiménez-Tejada ◽

J. E. Carceller

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Signal Amplitude ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signal

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Influence of the substrate voltage on the random telegraph signal parameters in submicron n -channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density

Applied Physics A ◽

10.1007/s003390050058 ◽

2000 ◽

Vol 70 (3) ◽

pp. 345-353 ◽

Cited By ~ 26

Author(s):

N.B. Lukyanchikova ◽

M.V. Petrichuk ◽

N.P. Garbar ◽

E. Simoen ◽

C. Claeys

Keyword(s):

Metal Oxide ◽

Charge Density ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signal ◽

Signal Parameters ◽

Inversion Charge

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Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.122476 ◽

1998 ◽

Vol 73 (17) ◽

pp. 2444-2446 ◽

Cited By ~ 14

Author(s):

N. B. Lukyanchikova ◽

M. V. Petrichuk ◽

N. P. Garbar ◽

E. Simoen ◽

C. Claeys

Keyword(s):

Metal Oxide ◽

Free Electron ◽

Field Effect ◽

Electron Distribution ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signal

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Anomalous Random Telegraph Signal Extractions from a Very Large Number of n-Metal Oxide Semiconductor Field-Effect Transistors Using Test Element Groups with 0.47 Hz–3.0 MHz Sampling Frequency

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c044 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C044 ◽

Cited By ~ 9

Author(s):

Kenichi Abe ◽

Takafumi Fujisawa ◽

Akinobu Teramoto ◽

Shunichi Watabe ◽

Shigetoshi Sugawa ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Sampling Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Test Element ◽

Random Telegraph Signal

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Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

Applied Physics Letters ◽

10.1063/1.4826918 ◽

2013 ◽

Vol 103 (18) ◽

pp. 183502 ◽

Cited By ~ 4

Author(s):

Weichun Luo ◽

Hong Yang ◽

Wenwu Wang ◽

Lichuan Zhao ◽

Hao Xu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Hot Carrier ◽

Physical Understanding ◽

High K

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Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

Applied Physics Letters ◽

10.1063/1.3697644 ◽

2012 ◽

Vol 100 (15) ◽

pp. 152102 ◽

Cited By ~ 11

Author(s):

Wen-Hung Lo ◽

Ting-Chang Chang ◽

Jyun-Yu Tsai ◽

Chih-Hao Dai ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress

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