Carbon doping of GaAs and (In,Ga)As in solid source molecular beam epitaxy using carbon tetrabromide

1993 ◽  
Vol 63 (17) ◽  
pp. 2399-2401 ◽  
Author(s):  
Kai Zhang ◽  
Wen‐yen Hwang ◽  
D. L. Miller ◽  
Larry W. Kapitan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Carbon Tetrabromide

Carbon doping in GaAs using carbon tetrabromide in solid source molecular beam epitaxy

2003 ◽  
Vol 252 (1-3) ◽  
pp. 37-43 ◽  
Author(s):  
Q.F Huang ◽  
S.F Yoon ◽  
K.H Tan ◽  
Z.Z Sun ◽  
R Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Carbon Tetrabromide

Growth and Doping of AlAs by Mombe

1994 ◽  
Vol 340 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk ◽  
W. S. Hobson ◽  
F. Ren
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Carbon Sources ◽  
Carbon Doping ◽  
Fully Depleted ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Dimethylethylamine Alane ◽  
Sims Analysis ◽  
Trimethylamine Alane

ABSTRACTA comparison of dimethylethylamine alane (DMEAA) and trimethylamine alane (TMAA) as aluminum sources and CBr4 and CC14 as carbon doping sources for deposition of AlAs by metalorganic molecular beam epitaxy (MOMBE) has been carried out. DMEAA was found to produce the lowest oxygen levels in AlAs, 5 x 1017 cm-3 VS. 1021 cm-3 for TMAA, even at growth temperatures as low as 500°C. This reduction is likely due to the absence of oxygenated solvents used during synthesis of the DMEAA. Undoped films grown from either source were fully depleted as-grown. Through the use of CBr 4, hole concentrations up to 4.5x1019 cm-3 were achieved in AlAs layers grown fiom DMEAA. Attempts to increase the hole concentration beyond this level resulted in a decrease in the hole concentration even though SIMS analysis showed the carbon concentration to increase with increasing dopant flow. Though the carbon sources did not appear to introduce additional oxygen, they appear to introduce other impurities, such as Cl and Br. Also, due to parasitic etching reactions with the adsorbed halogen, the use of these sources reduces the Al incorporation rate.

Heavy carbon doping of GaAs grown by solid‐source molecular‐beam epitaxy

1992 ◽  
Vol 61 (2) ◽  
pp. 183-185 ◽  
Author(s):  
C. Giannini ◽  
A. Fischer ◽  
C. Lange ◽  
K. Ploog ◽  
L. Tapfer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Heavy Carbon
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