Heavy carbon doping of GaAs grown by solid‐source molecular‐beam epitaxy

1992 ◽  
Vol 61 (2) ◽  
pp. 183-185 ◽  
Author(s):  
C. Giannini ◽  
A. Fischer ◽  
C. Lange ◽  
K. Ploog ◽  
L. Tapfer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Heavy Carbon

Growth and Doping of AlAs by Mombe

1994 ◽  
Vol 340 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk ◽  
W. S. Hobson ◽  
F. Ren
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Carbon Sources ◽  
Carbon Doping ◽  
Fully Depleted ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Dimethylethylamine Alane ◽  
Sims Analysis ◽  
Trimethylamine Alane

ABSTRACTA comparison of dimethylethylamine alane (DMEAA) and trimethylamine alane (TMAA) as aluminum sources and CBr4 and CC14 as carbon doping sources for deposition of AlAs by metalorganic molecular beam epitaxy (MOMBE) has been carried out. DMEAA was found to produce the lowest oxygen levels in AlAs, 5 x 1017 cm-3 VS. 1021 cm-3 for TMAA, even at growth temperatures as low as 500°C. This reduction is likely due to the absence of oxygenated solvents used during synthesis of the DMEAA. Undoped films grown from either source were fully depleted as-grown. Through the use of CBr 4, hole concentrations up to 4.5x1019 cm-3 were achieved in AlAs layers grown fiom DMEAA. Attempts to increase the hole concentration beyond this level resulted in a decrease in the hole concentration even though SIMS analysis showed the carbon concentration to increase with increasing dopant flow. Though the carbon sources did not appear to introduce additional oxygen, they appear to introduce other impurities, such as Cl and Br. Also, due to parasitic etching reactions with the adsorbed halogen, the use of these sources reduces the Al incorporation rate.

Carbon doping of InSb using CBr4 during growth by gas-source molecular beam epitaxy

1998 ◽  
Vol 72 (10) ◽  
pp. 1235-1237 ◽  
Author(s):  
W. V. Schoenfeld ◽  
M. J. Antonell ◽  
C. R. Abernathy
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Gas Source

Damage-Free Ion Beam Doping of Carbon During Molecular Beam Epitaxy of GaAs

1993 ◽  
Vol 316 ◽  
Author(s):  
Yunosuke Makita ◽  
Tsutomu Iida ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Ion Beam ◽  
Energy Shift ◽  
Beam Current ◽  
High Energy ◽  
Carbon Doping ◽  
High Mass ◽  
Impurity Effects

ABSTRACTRecently, we introduced various acceptor impurities into MBE-grown ultra-pure GaAs by conventional high-energy ion implantation and found many novel shallow emissions associated with acceptor-acceptor pairs. Most of these emissions were easily quenched by extremely small amount of residual donor atoms which were unintentionally introduced during doping processes. For the interpretation of impurity effects, the usage of mass-separated atom as dopant source was strongly suggested. Along this consideration, we developed combined ion beam and molecular beam epitaxy (CIBMBE) technology, in which damage-free doping with high mass purity (M/ΔM=100) is expected to be possible. We here present the results of low-energy (100 eV) carbon ion doping using CIBMBE method. Samples were prepared asa function of growth temperature (Tg=400-700°C) and ion beam current. Net hole concentration, |NA-ND| as high as ~1×1020 cm-3 was obtained in as-grown samples. In 2K photoluminescence spectra, emissions due to acceptor-acceptor pairs exhibit specific energy shift with growing |NA-ND|. Results indicate that carbon doping can be made efficiently even at Tg as low as 500°C without any post heat treatment. These results also tell that by CIBMBE method no serious radiation damages are produced and the undesired impurity contamination can be considerably suppressed.

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