Growth and Doping of AlAs by Mombe

1994 ◽  
Vol 340 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk ◽  
W. S. Hobson ◽  
F. Ren
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Carbon Sources ◽  
Carbon Doping ◽  
Fully Depleted ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Dimethylethylamine Alane ◽  
Sims Analysis ◽  
Trimethylamine Alane

ABSTRACTA comparison of dimethylethylamine alane (DMEAA) and trimethylamine alane (TMAA) as aluminum sources and CBr4 and CC14 as carbon doping sources for deposition of AlAs by metalorganic molecular beam epitaxy (MOMBE) has been carried out. DMEAA was found to produce the lowest oxygen levels in AlAs, 5 x 1017 cm-3 VS. 1021 cm-3 for TMAA, even at growth temperatures as low as 500°C. This reduction is likely due to the absence of oxygenated solvents used during synthesis of the DMEAA. Undoped films grown from either source were fully depleted as-grown. Through the use of CBr 4, hole concentrations up to 4.5x1019 cm-3 were achieved in AlAs layers grown fiom DMEAA. Attempts to increase the hole concentration beyond this level resulted in a decrease in the hole concentration even though SIMS analysis showed the carbon concentration to increase with increasing dopant flow. Though the carbon sources did not appear to introduce additional oxygen, they appear to introduce other impurities, such as Cl and Br. Also, due to parasitic etching reactions with the adsorbed halogen, the use of these sources reduces the Al incorporation rate.

Damage-Free Ion Beam Doping of Carbon During Molecular Beam Epitaxy of GaAs

1993 ◽  
Vol 316 ◽  
Author(s):  
Yunosuke Makita ◽  
Tsutomu Iida ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Ion Beam ◽  
Energy Shift ◽  
Beam Current ◽  
High Energy ◽  
Carbon Doping ◽  
High Mass ◽  
Impurity Effects

ABSTRACTRecently, we introduced various acceptor impurities into MBE-grown ultra-pure GaAs by conventional high-energy ion implantation and found many novel shallow emissions associated with acceptor-acceptor pairs. Most of these emissions were easily quenched by extremely small amount of residual donor atoms which were unintentionally introduced during doping processes. For the interpretation of impurity effects, the usage of mass-separated atom as dopant source was strongly suggested. Along this consideration, we developed combined ion beam and molecular beam epitaxy (CIBMBE) technology, in which damage-free doping with high mass purity (M/ΔM=100) is expected to be possible. We here present the results of low-energy (100 eV) carbon ion doping using CIBMBE method. Samples were prepared asa function of growth temperature (Tg=400-700°C) and ion beam current. Net hole concentration, |NA-ND| as high as ~1×1020 cm-3 was obtained in as-grown samples. In 2K photoluminescence spectra, emissions due to acceptor-acceptor pairs exhibit specific energy shift with growing |NA-ND|. Results indicate that carbon doping can be made efficiently even at Tg as low as 500°C without any post heat treatment. These results also tell that by CIBMBE method no serious radiation damages are produced and the undesired impurity contamination can be considerably suppressed.

Carbon doping of AlAs using CCl4and CBr4during growth by metalorganic molecular‐beam epitaxy

1994 ◽  
Vol 65 (17) ◽  
pp. 2205-2207 ◽  
Author(s):  
C. R. Abernathy ◽  
J. D. MacKenzie ◽  
W. S. Hobson ◽  
P. W. Wisk
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Metalorganic Molecular Beam Epitaxy

Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy

1990 ◽  
Vol 56 (11) ◽  
pp. 1040-1042 ◽  
Author(s):  
T. J. de Lyon ◽  
J. M. Woodall ◽  
M. S. Goorsky ◽  
P. D. Kirchner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Lattice Contraction ◽  
Metalorganic Molecular Beam Epitaxy

Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane

1990 ◽  
Vol 56 (26) ◽  
pp. 2654-2656 ◽  
Author(s):  
C. R. Abernathy ◽  
A. S. Jordan ◽  
S. J. Pearton ◽  
W. S. Hobson ◽  
D. A. Bohling ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Trimethylamine Alane

The Thermal Stability of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy

1992 ◽  
Vol 262 ◽  
Author(s):  
Hyunchul Sohn ◽  
E. R. Weber ◽  
S. Nozaki ◽  
M. Konagai ◽  
K. Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Electron Diffraction Study ◽  
Gaas Layer ◽  
Annealed Sample ◽  
Misfit Dislocations ◽  
Lattice Contraction ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy

ABSTRACTHeavily carbon-doped GaAs thin films with a hole concentration of 5.8 × 1020 cm-3, grown by metalorganic molecular beam epitaxy (MOMBE), were annealed at 900°C for 30 minutes. The microstructural changes due to annealing were investigated by transmission electron microscopy. Electron diffraction study showed some evidence of carbon clustering on {111} in as-grown samples. A high density of precipitates was found in the annealed sample, together with a decrease of the lattice contraction and hole concentration. In the as-grown layer, misfit dislocations with only one type of Burgers vector were observed, while misfit dislocations with the several Burgers vectors were observed in [110] direction after annealing. The density of misfit dislocations in both <110> directions increased significantly even though the lattice contraction in carbon-doped GaAs decreased after annealing. A model is proposed to explain the change of misfit dislocation density in heavily carbon-doped GaAs layer.

Sign in / Sign up

Export Citation Format

Share Document