dimethylethylamine alane Latest Research Papers

Investigation of the kinetics of the chemical vapor deposition of aluminum from dimethylethylamine alane: experiments and computations

physica status solidi (c) ◽

10.1002/pssc.201510023 ◽

2015 ◽

Vol 12 (7) ◽

pp. 923-930 ◽

Cited By ~ 6

Author(s):

Ioannis G. Aviziotis ◽

Thomas Duguet ◽

Khaled Soussi ◽

George Kokkoris ◽

Nikolaos Cheimarios ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Dimethylethylamine Alane ◽

Kinetics Of

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A Comparison between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium as the Aluminium Precursors

Chinese Physics Letters ◽

10.1088/0256-307x/24/2/059 ◽

2007 ◽

Vol 24 (2) ◽

pp. 516-519 ◽

Cited By ~ 1

Author(s):

Hu Wei-Guo ◽

Liu Xiang-Lin ◽

Zhang Pan-Feng ◽

Zhao Feng-Ai ◽

Jiao Chun-Mei ◽

...

Keyword(s):

Dimethylethylamine Alane

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Chemical Vapor Deposition of TiAlN film by Using Titanium Tetrachloride, Dimethylethylamine Alane and Ammonia Gas for ULSI Cu Diffusion Barrier Application

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.8253 ◽

2004 ◽

Vol 43 (12) ◽

pp. 8253-8257 ◽

Cited By ~ 8

Author(s):

Young-Hoon Shin ◽

Yukihiro Shimogaki

Keyword(s):

Chemical Vapor Deposition ◽

Diffusion Barrier ◽

Vapor Deposition ◽

Titanium Tetrachloride ◽

Chemical Vapor ◽

Ammonia Gas ◽

Dimethylethylamine Alane ◽

Cu Diffusion Barrier

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Microstructure and properties of aluminum contacts formed on GaAs(100) by low pressure chemical vapor deposition with dimethylethylamine alane source

Journal of Electronic Materials ◽

10.1007/bf02657721 ◽

2001 ◽

Vol 30 (8) ◽

pp. 980-986 ◽

Cited By ~ 11

Author(s):

V. Shashkin ◽

S. Rushworth ◽

V. Danil'tsev ◽

A. Murel ◽

Yu. Drozdov ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Microstructure And Properties ◽

Pressure Chemical ◽

Dimethylethylamine Alane

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Morphology and Hole Filling Properties of Chemically Vapor Deposited Aluminum Films Prepared from Dimethylethylamine Alane

Journal of The Electrochemical Society ◽

10.1149/1.1339031 ◽

2001 ◽

Vol 148 (1) ◽

pp. C10 ◽

Cited By ~ 5

Author(s):

Do-Heyoung Kim ◽

Byung-Yup Kim

Keyword(s):

Hole Filling ◽

Aluminum Films ◽

Dimethylethylamine Alane ◽

Chemically Vapor Deposited

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Low temperature atomic layer growth of aluminum nitride on Si(100) using dimethylethylamine alane and 1,1-dimethylhydrazine

Thin Solid Films ◽

10.1016/s0040-6090(00)01031-2 ◽

2000 ◽

Vol 372 (1-2) ◽

pp. 10-24 ◽

Cited By ~ 8

Author(s):

David W Robinson ◽

J.W Rogers Jr.

Keyword(s):

Low Temperature ◽

Aluminum Nitride ◽

Atomic Layer ◽

Layer Growth ◽

Dimethylethylamine Alane

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Characteristics of aluminum films prepared by metalorganic chemical vapor deposition using dimethylethylamine alane on the plasma-pretreated TiN surfaces

Korean Journal of Chemical Engineering ◽

10.1007/bf02706859 ◽

2000 ◽

Vol 17 (4) ◽

pp. 449-454 ◽

Cited By ~ 11

Author(s):

Do-Heyoung Kim ◽

Byung-Yup Kim

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Aluminum Films ◽

Dimethylethylamine Alane ◽

Metalorganic Chemical

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Reaction of dimethylethylamine alane and ammonia on Si(100) during the atomic layer growth of AlN: static SIMS, TPSIMS, and TPD

Surface Science ◽

10.1016/s0039-6028(00)00328-9 ◽

2000 ◽

Vol 453 (1-3) ◽

pp. 119-129 ◽

Cited By ~ 7

Author(s):

J.S. Kuo ◽

J.W. Rogers

Keyword(s):

Atomic Layer ◽

Layer Growth ◽

Dimethylethylamine Alane

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Hydrogen plasma pretreatment effect on the deposition of aluminum thin films from metalorganic chemical vapor deposition using dimethylethylamine alane

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581678 ◽

1999 ◽

Vol 17 (3) ◽

pp. 1031-1035 ◽

Cited By ~ 7

Author(s):

Tae Woong Jang ◽

Hwa Sung Rhee ◽

Byung Tae Ahn

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Hydrogen Plasma ◽

Chemical Vapor ◽

Pretreatment Effect ◽

Plasma Pretreatment ◽

Dimethylethylamine Alane ◽

Metalorganic Chemical

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Effect of temperature and substrate on the growth behaviors of chemical vapor deposited Al films with dimethylethylamine alane source

Thin Solid Films ◽

10.1016/s0040-6090(98)00855-4 ◽

1998 ◽

Vol 333 (1-2) ◽

pp. 137-141 ◽

Cited By ~ 20

Author(s):

Tae Woong Jang ◽

Won Moon ◽

Jong Tae Baek ◽

Byung Tae Ahn

Keyword(s):

Chemical Vapor ◽

Effect Of Temperature ◽

Chemical Vapor Deposited ◽

Dimethylethylamine Alane

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dimethylethylamine alane
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H-INDEX

Investigation of the kinetics of the chemical vapor deposition of aluminum from dimethylethylamine alane: experiments and computations

A Comparison between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium as the Aluminium Precursors

Chemical Vapor Deposition of TiAlN film by Using Titanium Tetrachloride, Dimethylethylamine Alane and Ammonia Gas for ULSI Cu Diffusion Barrier Application

Microstructure and properties of aluminum contacts formed on GaAs(100) by low pressure chemical vapor deposition with dimethylethylamine alane source

Morphology and Hole Filling Properties of Chemically Vapor Deposited Aluminum Films Prepared from Dimethylethylamine Alane

Low temperature atomic layer growth of aluminum nitride on Si(100) using dimethylethylamine alane and 1,1-dimethylhydrazine

Characteristics of aluminum films prepared by metalorganic chemical vapor deposition using dimethylethylamine alane on the plasma-pretreated TiN surfaces

Reaction of dimethylethylamine alane and ammonia on Si(100) during the atomic layer growth of AlN: static SIMS, TPSIMS, and TPD

Hydrogen plasma pretreatment effect on the deposition of aluminum thin films from metalorganic chemical vapor deposition using dimethylethylamine alane

Effect of temperature and substrate on the growth behaviors of chemical vapor deposited Al films with dimethylethylamine alane source

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dimethylethylamine alaneRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

Investigation of the kinetics of the chemical vapor deposition of aluminum from dimethylethylamine alane: experiments and computations

A Comparison between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium as the Aluminium Precursors

Chemical Vapor Deposition of TiAlN film by Using Titanium Tetrachloride, Dimethylethylamine Alane and Ammonia Gas for ULSI Cu Diffusion Barrier Application

Microstructure and properties of aluminum contacts formed on GaAs(100) by low pressure chemical vapor deposition with dimethylethylamine alane source

Morphology and Hole Filling Properties of Chemically Vapor Deposited Aluminum Films Prepared from Dimethylethylamine Alane

Low temperature atomic layer growth of aluminum nitride on Si(100) using dimethylethylamine alane and 1,1-dimethylhydrazine

Characteristics of aluminum films prepared by metalorganic chemical vapor deposition using dimethylethylamine alane on the plasma-pretreated TiN surfaces

Reaction of dimethylethylamine alane and ammonia on Si(100) during the atomic layer growth of AlN: static SIMS, TPSIMS, and TPD

Hydrogen plasma pretreatment effect on the deposition of aluminum thin films from metalorganic chemical vapor deposition using dimethylethylamine alane

Effect of temperature and substrate on the growth behaviors of chemical vapor deposited Al films with dimethylethylamine alane source

dimethylethylamine alane
Recently Published Documents