Iodine and carbon tetrabromide use in solid source molecular beam epitaxy

1998 ◽  
Vol 16 (3) ◽  
pp. 1361 ◽  
Author(s):  
D. L. Miller
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Tetrabromide

Some properties of carbon-doped GaAs using carbon tetrabromide in solid-source molecular beam epitaxy

2002 ◽  
Vol 243 (1) ◽  
pp. 41-46 ◽  
Author(s):  
R Zhang ◽  
S.F Yoon ◽  
K.H Tan ◽  
Z.Z Sun ◽  
Q.F Huang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Carbon Tetrabromide

Carbon doping of GaAs and (In,Ga)As in solid source molecular beam epitaxy using carbon tetrabromide

1993 ◽  
Vol 63 (17) ◽  
pp. 2399-2401 ◽  
Author(s):  
Kai Zhang ◽  
Wen‐yen Hwang ◽  
D. L. Miller ◽  
Larry W. Kapitan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Carbon Tetrabromide

Co-doping carbon tetrabromide (CBr4) and antimony (Sb) on GaAs [100] in solid source molecular beam epitaxy

2004 ◽  
Vol 267 (1-2) ◽  
pp. 364-371 ◽  
Author(s):  
W.K. Cheah ◽  
W.J. Fan ◽  
S.F. Yoon ◽  
R. Liu ◽  
A.T.S. Wee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Tetrabromide ◽  
Co Doping
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