Carbon doping for p-type GaP and GaPN in molecular beam epitaxy using carbon tetrabromide source

2011 ◽  
Vol 8 (2) ◽  
pp. 285-287
Author(s):  
Zhengxin Liu ◽  
Hitoshi Kawanami ◽  
Isao Sakata
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Carbon Tetrabromide ◽  
P Type

Carbon doping of GaAs and (In,Ga)As in solid source molecular beam epitaxy using carbon tetrabromide

1993 ◽  
Vol 63 (17) ◽  
pp. 2399-2401 ◽  
Author(s):  
Kai Zhang ◽  
Wen‐yen Hwang ◽  
D. L. Miller ◽  
Larry W. Kapitan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Carbon Tetrabromide

Carbon doping in GaAs using carbon tetrabromide in solid source molecular beam epitaxy

2003 ◽  
Vol 252 (1-3) ◽  
pp. 37-43 ◽  
Author(s):  
Q.F Huang ◽  
S.F Yoon ◽  
K.H Tan ◽  
Z.Z Sun ◽  
R Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doping ◽  
Carbon Tetrabromide

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

scholarly journals Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol. (b) 244, No. 6, 1867–1871 (2007)]

2007 ◽  
Vol 244 (12) ◽  
pp. 4692-4692
Author(s):  
A. Armstrong ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
P Type

p‐type doping of gallium antimonide grown by molecular beam epitaxy using silicon

1990 ◽  
Vol 57 (21) ◽  
pp. 2256-2258 ◽  
Author(s):  
T. M. Rossi ◽  
D. A. Collins ◽  
D. H. Chow ◽  
T. C. McGill
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
P Type
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