Enhancement of boron diffusion through gate oxides in metal‐oxide‐semiconductor devices under rapid thermal silicidation

1991 ◽  
Vol 58 (19) ◽  
pp. 2123-2125 ◽  
Author(s):  
J. Lin ◽  
K. Park ◽  
S. Batra ◽  
S. Banerjee ◽  
J. Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Boron Diffusion ◽  
Gate Oxides

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

2011 ◽  
Vol 50 (9) ◽  
pp. 090201
Author(s):  
Masato Noborio ◽  
Michael Grieb ◽  
Anton J. Bauer ◽  
Dethard Peters ◽  
Peter Friedrichs ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Oxides ◽  
P Type

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

2011 ◽  
Vol 50 (9R) ◽  
pp. 090201 ◽  
Author(s):  
Masato Noborio ◽  
Michael Grieb ◽  
Anton J. Bauer ◽  
Dethard Peters ◽  
Peter Friedrichs ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Oxides ◽  
P Type

Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors

2017 ◽  
Vol 111 (4) ◽  
pp. 042104 ◽  
Author(s):  
M. Cabello ◽  
V. Soler ◽  
J. Montserrat ◽  
J. Rebollo ◽  
J. M. Rafí ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Boron Diffusion ◽  
Gate Oxides

Boron Diffusion Through Pure Silicon Oxide and Oxynitride Used for Metal‐Oxide‐Semiconductor Devices

1993 ◽  
Vol 140 (12) ◽  
pp. 3624-3627 ◽  
Author(s):  
Takayuki Aoyama ◽  
Kunihiro Suzuki ◽  
Hiroko Tashiro ◽  
Yoko Toda ◽  
Tatsuya Yamazaki ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Silicon Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Boron Diffusion ◽  
Pure Silicon
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