Boron Diffusion Through Pure Silicon Oxide and Oxynitride Used for Metal‐Oxide‐Semiconductor Devices

1993 ◽  
Vol 140 (12) ◽  
pp. 3624-3627 ◽  
Author(s):  
Takayuki Aoyama ◽  
Kunihiro Suzuki ◽  
Hiroko Tashiro ◽  
Yoko Toda ◽  
Tatsuya Yamazaki ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Silicon Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Boron Diffusion ◽  
Pure Silicon

Enhancement of boron diffusion through gate oxides in metal‐oxide‐semiconductor devices under rapid thermal silicidation

1991 ◽  
Vol 58 (19) ◽  
pp. 2123-2125 ◽  
Author(s):  
J. Lin ◽  
K. Park ◽  
S. Batra ◽  
S. Banerjee ◽  
J. Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Boron Diffusion ◽  
Gate Oxides

Effects of Hf contamination on the properties of silicon oxide metal–oxide–semiconductor devices

2002 ◽  
Vol 81 (26) ◽  
pp. 5018-5020 ◽  
Author(s):  
Chang Seok Kang ◽  
Katsunori Onishi ◽  
Laegu Kang ◽  
Jack C. Lee
Keyword(s):  
Metal Oxide ◽  
Silicon Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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