Nitrogen Concentration Dependence on Boron Diffusion in Thin Silicon Oxynitrides Used for Metal‐Oxide‐Semiconductor Devices

1998 ◽  
Vol 145 (2) ◽  
pp. 689-693 ◽  
Author(s):  
Takayuki Aoyama ◽  
Kunihiro Suzuki ◽  
Hiroko Tashiro ◽  
Yoko Tada ◽  
Kei Horiuchi
Keyword(s):  
Metal Oxide ◽  
Concentration Dependence ◽  
Semiconductor Devices ◽  
Nitrogen Concentration ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Boron Diffusion ◽  
Thin Silicon ◽  
Silicon Oxynitrides

Enhancement of boron diffusion through gate oxides in metal‐oxide‐semiconductor devices under rapid thermal silicidation

1991 ◽  
Vol 58 (19) ◽  
pp. 2123-2125 ◽  
Author(s):  
J. Lin ◽  
K. Park ◽  
S. Batra ◽  
S. Banerjee ◽  
J. Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Boron Diffusion ◽  
Gate Oxides

Boron Diffusion Through Pure Silicon Oxide and Oxynitride Used for Metal‐Oxide‐Semiconductor Devices

1993 ◽  
Vol 140 (12) ◽  
pp. 3624-3627 ◽  
Author(s):  
Takayuki Aoyama ◽  
Kunihiro Suzuki ◽  
Hiroko Tashiro ◽  
Yoko Toda ◽  
Tatsuya Yamazaki ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Silicon Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Boron Diffusion ◽  
Pure Silicon
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