Improvement in radiation hardness of gate oxides in metal–oxide semiconductor devices by repeated rapid thermal oxidations in N2O

1994 ◽  
Vol 64 (23) ◽  
pp. 3136-3138 ◽  
Author(s):  
You‐Lin Wu ◽  
Jenn‐Gwo Hwu
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Radiation Hardness ◽  
Oxide Semiconductor ◽  
Gate Oxides

Enhancement of boron diffusion through gate oxides in metal‐oxide‐semiconductor devices under rapid thermal silicidation

1991 ◽  
Vol 58 (19) ◽  
pp. 2123-2125 ◽  
Author(s):  
J. Lin ◽  
K. Park ◽  
S. Batra ◽  
S. Banerjee ◽  
J. Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Boron Diffusion ◽  
Gate Oxides

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

2011 ◽  
Vol 50 (9) ◽  
pp. 090201
Author(s):  
Masato Noborio ◽  
Michael Grieb ◽  
Anton J. Bauer ◽  
Dethard Peters ◽  
Peter Friedrichs ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Oxides ◽  
P Type

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

2011 ◽  
Vol 50 (9R) ◽  
pp. 090201 ◽  
Author(s):  
Masato Noborio ◽  
Michael Grieb ◽  
Anton J. Bauer ◽  
Dethard Peters ◽  
Peter Friedrichs ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Oxides ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document