Current-voltage characteristics of metal-oxide-semiconductor devices containing Ge or Si nanocrystals in thin gate oxides

2009 ◽  
Vol 106 (6) ◽  
pp. 064505 ◽  
Author(s):  
V. Beyer ◽  
J. von Borany ◽  
M. Klimenkov ◽  
T. Müller
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Oxides ◽  
Si Nanocrystals ◽  
Current Voltage ◽  
Current Voltage Characteristics

Enhancement of boron diffusion through gate oxides in metal‐oxide‐semiconductor devices under rapid thermal silicidation

1991 ◽  
Vol 58 (19) ◽  
pp. 2123-2125 ◽  
Author(s):  
J. Lin ◽  
K. Park ◽  
S. Batra ◽  
S. Banerjee ◽  
J. Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Boron Diffusion ◽  
Gate Oxides

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

2011 ◽  
Vol 50 (9) ◽  
pp. 090201
Author(s):  
Masato Noborio ◽  
Michael Grieb ◽  
Anton J. Bauer ◽  
Dethard Peters ◽  
Peter Friedrichs ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Oxides ◽  
P Type

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

2011 ◽  
Vol 50 (9R) ◽  
pp. 090201 ◽  
Author(s):  
Masato Noborio ◽  
Michael Grieb ◽  
Anton J. Bauer ◽  
Dethard Peters ◽  
Peter Friedrichs ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Oxides ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document