scholarly journals Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

Materials ◽  
2012 ◽  
Vol 5 (7) ◽  
pp. 1297-1335 ◽  
Author(s):  
Rathnait D. Long ◽  
Paul C. McIntyre
Keyword(s):  
Gallium Nitride ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
Surface Preparation ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Oxides

Enhancement of boron diffusion through gate oxides in metal‐oxide‐semiconductor devices under rapid thermal silicidation

1991 ◽  
Vol 58 (19) ◽  
pp. 2123-2125 ◽  
Author(s):  
J. Lin ◽  
K. Park ◽  
S. Batra ◽  
S. Banerjee ◽  
J. Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Boron Diffusion ◽  
Gate Oxides

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

2011 ◽  
Vol 50 (9) ◽  
pp. 090201
Author(s):  
Masato Noborio ◽  
Michael Grieb ◽  
Anton J. Bauer ◽  
Dethard Peters ◽  
Peter Friedrichs ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Oxides ◽  
P Type

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

2011 ◽  
Vol 50 (9R) ◽  
pp. 090201 ◽  
Author(s):  
Masato Noborio ◽  
Michael Grieb ◽  
Anton J. Bauer ◽  
Dethard Peters ◽  
Peter Friedrichs ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Oxides ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document