Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon

1988 ◽  
Vol 53 (1) ◽  
pp. 34-36 ◽  
Author(s):  
S. T. Ahn ◽  
H. W. Kennel ◽  
J. D. Plummer ◽  
W. A. Tiller ◽  
Z. U. Rek ◽  
...  
Keyword(s):  
Phosphorus Diffusion ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Effect Of Oxygen

scholarly journals Effect of Oxygen in Low Temperature Boron and Phosphorus Diffusion Gettering of Iron in Czochralski-Grown Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 395-400 ◽  
Author(s):  
Ville Vähänissi ◽  
Antti Haarahiltunen ◽  
H. Talvitie ◽  
M.I. Asghar ◽  
Marko Yli-Koski ◽  
...  
Keyword(s):  
Low Temperature ◽  
Sheet Resistance ◽  
Low Temperatures ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Thermal Budget ◽  
Phosphorus Diffusion ◽  
Oxygen Precipitation ◽  
Effect Of Oxygen

Low temperature boron and phosphorous diffusion gettering (BDG and PDG) of iron in Czochralski-grown silicon were experimentally studied. Differences and similarities between the gettering techniques were clarified by using intentionally iron contaminated wafers emphasizing especially the effect of oxygen. Experiments showed that the surprisingly high gettering effects of BDG could be explained by B-Si precipitates. Oxygen precipitation was seen to decrease minority carrier diffusion length after long gettering at low temperatures in both BDG and PDG. In the case of BDG oxygen precipitation affected more as a higher thermal budget was needed to obtain similar sheet resistance to that of PDG. According to experiments the efficiency of BDG can not be concluded from the sheet resistance, whereas the efficiency of PDG can. This has practical influences in a process control environment.

Effect of oxygen precipitation on the performance of Czochralski silicon solar cells

2011 ◽  
Vol 95 (11) ◽  
pp. 3148-3151 ◽  
Author(s):  
Lin Chen ◽  
Xuegong Yu ◽  
Peng Chen ◽  
Peng Wang ◽  
Xin Gu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Effect Of Oxygen

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

2019 ◽  
Vol 18 (1) ◽  
pp. 1001-1011 ◽  
Author(s):  
Yuheng Zeng ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Xinpeng Zhang ◽  
Lixia Lin ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Phosphorus Doped

Enhancement of oxygen precipitation in quenched Czochralski silicon crystals

1989 ◽  
Vol 66 (8) ◽  
pp. 3958-3960 ◽  
Author(s):  
Akito Hara ◽  
Tetsuo Fukuda ◽  
Toru Miyabo ◽  
Iesada Hirai
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation

Effect of oxygen precipitation on voids in bulk silicon

2003 ◽  
Vol 66 (1-4) ◽  
pp. 289-296 ◽  
Author(s):  
Xuegong Yu ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Jin Xu ◽  
Liben Li ◽  
...  
Keyword(s):  
Bulk Silicon ◽  
Oxygen Precipitation ◽  
Effect Of Oxygen

Lifetime Degradation by Oxygen Precipitation Combined with Metal Contamination in Czochralski Silicon for Solar Cells

2019 ◽  
Vol 8 (4) ◽  
pp. Q72-Q75 ◽  
Author(s):  
Kohei Onishi ◽  
Kosuke Kinoshita ◽  
Takuto Kojima ◽  
Yoshio Ohshita ◽  
Atsushi Ogura
Keyword(s):  
Solar Cells ◽  
Metal Contamination ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Dependence of Mechanical Strength of Czochralski Silicon Wafers on the Temperature of Oxygen Precipitation Annealing

1997 ◽  
Vol 144 (3) ◽  
pp. 1111-1120 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Hisashi Katahama ◽  
Naoshi Adachi
Keyword(s):  
Mechanical Strength ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation
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