Simultaneous achievement of superior response and full recovery of titanium dioxide/graphene hybrid FET sensors for NH3 through p- to n-mode switch

2020 ◽  
Vol 22 (29) ◽  
pp. 16701-16711 ◽  
Author(s):  
Attia Falak ◽  
Yi Tian ◽  
Lanqin Yan ◽  
Xianfeng Zhang ◽  
Lihua Xu ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Schottky Barrier ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Schottky Barrier Height ◽  
Mode Switch ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Sensing Performance

Ultrathin TiO2/graphene field effect transistor sensors with 100% titanium coverage (D100) favor the room temperature NH3 sensing performance at lower Schottky barrier height via switch in the sensing mode from p to n.

scholarly journals Influence of chamber design on the gas sensing performance of graphene field-effect-transistor

2020 ◽  
Vol 2 (7) ◽  
Author(s):  
Lorenzo Lopez ◽  
Vernalyn Copa ◽  
Takeshi Hayasaka ◽  
Maria Angela Faustino-Lopez ◽  
Yichuan Wu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gas Sensing ◽  
Chamber Design ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Sensing Performance

scholarly journals Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Sachin Gupta ◽  
F. Rortais ◽  
R. Ohshima ◽  
Y. Ando ◽  
T. Endo ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Schottky Barrier Height ◽  
Metal Contacts ◽  
Back Gate ◽  
Vapor Deposition Technique ◽  
Effect Transistor

AbstractTwo-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage (Vg) shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS2 contacts is found to be +28.8 meV (at Vg = 0V), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS2 contact. With the application of positive gate voltage, SBH shows a reduction, which reveals ohmic behavior of Py/MoS2 contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS2 based spintronics and therefore using directly grown MoS2 channels in the present study can pave a path towards high performance devices for large scale applications.

scholarly journals Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature

2018 ◽  
Vol 10 (13) ◽  
pp. 10618-10621
Author(s):  
Sungsik Lee ◽  
Arokia Nathan ◽  
Jack Alexander-Webber ◽  
Philipp Braeuninger-Weimer ◽  
Abhay A. Sagade ◽  
...  
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Dirac Point ◽  
Carrier Injection ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Injection Barrier

Investigation of Parameters for Schottky Barrier (SB) Height for Schottky Barrier Based Carbon Nanotube Field Effect Transistor Device

2020 ◽  
Vol 15 (7) ◽  
pp. 783-791
Author(s):  
Anil Kumar Bhardwaj ◽  
Sumeet Gupta ◽  
Balwinder Raj
Keyword(s):  
Dielectric Constant ◽  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Schottky Barrier Height ◽  
Oxide Thickness ◽  
Proper Choice ◽  
Effect Transistor

The design and development of Schottky Barrier Carbon Nanotube Field Effect Transistor (SB CNTFET) is still in the primitive research phase for its utilization in digital design. There is an immediate requirement for the analysis of parametric relations with structural factors to benefit the researchers working in this field. This work helps in the improvement of SB based CNTFET devices to be used in the development of various circuit applications. In this work, investigation of Schottky Barrier height on the performance of SB CNTFET for various geometrical and physical design parameters at the device level has been reported. The analysis of various device parameters of carbon nanotube, i. e., chirality, diameter, band gap, oxide thickness and dielectric constant has been carried out viz. subthreshold conduction, and ION/IOFF ratio. The paper also reports the effect of high dielectric constant material in SB CNTFET with oxide thickness along with Schottky Barrier Height Variation. The performance of SB CNTFET with variation in Schottky Barrier height and temperature variation is also reported. The results obtained indicate that performance of SB based CNTFET can be modified by the proper choice of chirality, dielectrics, oxide thickness and operating temperature. The SB parameter can be optimized by proper choice of metal contact in case of CNTFET.

Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

2015 ◽  
Vol 3 (17) ◽  
pp. 4235-4238 ◽  
Author(s):  
Chang-Soo Park ◽  
Yu Zhao ◽  
Yoon Shon ◽  
Im Taek Yoon ◽  
Cheol Jin Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Chemical Vapor ◽  
Ferromagnetic Semiconductor ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

We report a ferromagnetic graphene field-effect transistor with a band gap.

Highly Enhanced Gas Sensing Performance Using a 1T/2H Heterophase MoS2 Field-Effect Transistor at Room Temperature

2020 ◽  
Vol 12 (45) ◽  
pp. 50610-50618
Author(s):  
Boyang Zong ◽  
Qiuju Li ◽  
Xiaoyan Chen ◽  
Chengbin Liu ◽  
Liangchun Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Gas Sensing ◽  
Effect Transistor ◽  
Sensing Performance
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