scholarly journals Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature

2018 ◽  
Vol 10 (13) ◽  
pp. 10618-10621
Author(s):  
Sungsik Lee ◽  
Arokia Nathan ◽  
Jack Alexander-Webber ◽  
Philipp Braeuninger-Weimer ◽  
Abhay A. Sagade ◽  
...  
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Dirac Point ◽  
Carrier Injection ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Injection Barrier

Microwave switching of graphene field effect transistor at and far from the Dirac point

2010 ◽  
Vol 96 (10) ◽  
pp. 103105 ◽  
Author(s):  
G. Deligeorgis ◽  
M. Dragoman ◽  
D. Neculoiu ◽  
D. Dragoman ◽  
G. Konstantinidis ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Dirac Point ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

2015 ◽  
Vol 3 (17) ◽  
pp. 4235-4238 ◽  
Author(s):  
Chang-Soo Park ◽  
Yu Zhao ◽  
Yoon Shon ◽  
Im Taek Yoon ◽  
Cheol Jin Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Chemical Vapor ◽  
Ferromagnetic Semiconductor ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

We report a ferromagnetic graphene field-effect transistor with a band gap.

scholarly journals Detection of Alpha-Fetoprotein in Hepatocellular Carcinoma Patient Plasma with Graphene Field-Effect Transistor

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 4032 ◽  
Author(s):  
Dae Kim ◽  
Hong Oh ◽  
Woo Park ◽  
Dong Jeon ◽  
Ki Lim ◽  
...  
Keyword(s):  
Hepatocellular Carcinoma ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Dirac Point ◽  
Alpha Fetoprotein ◽  
Detection Sensitivity ◽  
Practical Applications ◽  
Graphene Field Effect Transistor ◽  
Channel Surface ◽  
Effect Transistor

The detection of alpha-fetoprotein (AFP) in plasma is important in the diagnosis of hepatocellular carcinoma (HCC) in humans. We developed a biosensor to detect AFP in HCC patient plasma and in a phosphate buffer saline (PBS) solution using a graphene field-effect transistor (G-FET). The G-FET was functionalized with 1-pyrenebutyric acid N-hydroxysuccinimide ester (PBASE) for immobilization of an anti-AFP antibody. AFP was detected by assessing the shift in the voltage of the Dirac point (ΔVDirac) after binding of AFP to the anti-AFP-immobilized G-FET channel surface. This anti-AFP-immobilized G-FET biosensor was able to detect AFP at a concentration of 0.1 ng mL−1 in PBS, and the detection sensitivity was 16.91 mV. In HCC patient plasma, the biosensor was able to detect AFP at a concentration of 12.9 ng mL−1, with a detection sensitivity of 5.68 mV. The sensitivity (ΔVDirac) depended on the concentration of AFP in either PBS or HCC patient plasma. These data suggest that G-FET biosensors could have practical applications in diagnostics.

Simultaneous achievement of superior response and full recovery of titanium dioxide/graphene hybrid FET sensors for NH3 through p- to n-mode switch

2020 ◽  
Vol 22 (29) ◽  
pp. 16701-16711 ◽  
Author(s):  
Attia Falak ◽  
Yi Tian ◽  
Lanqin Yan ◽  
Xianfeng Zhang ◽  
Lihua Xu ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Schottky Barrier ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Schottky Barrier Height ◽  
Mode Switch ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Sensing Performance

Ultrathin TiO2/graphene field effect transistor sensors with 100% titanium coverage (D100) favor the room temperature NH3 sensing performance at lower Schottky barrier height via switch in the sensing mode from p to n.

Controlling the Dirac point voltage of graphene by mechanically bending the ferroelectric gate of a graphene field effect transistor

2019 ◽  
Vol 6 (2) ◽  
pp. 302-310 ◽  
Author(s):  
Guangliang Hu ◽  
Jingying Wu ◽  
Chunrui Ma ◽  
Zhongshuai Liang ◽  
Weihua Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Dirac Point ◽  
Flexoelectric Effect ◽  
Graphene Field Effect Transistor ◽  
Graphene Doping ◽  
Effect Transistor

The linear shift in VDirac of a flexible GFET, caused by the flexoelectric effect of a PLZT gate, makes it enormously useful for both tuning the graphene doping state and detecting bending curvature.

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