Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition
2015 ◽
Vol 3
(17)
◽
pp. 4235-4238
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Keyword(s):
Band Gap
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We report a ferromagnetic graphene field-effect transistor with a band gap.
2011 ◽
Vol 50
(4S)
◽
pp. 04DA11
◽
2008 ◽
Vol 47
(2)
◽
pp. 879-884
◽
1995 ◽
Vol 34
(Part 1, No. 2A)
◽
pp. 476-481
◽
2018 ◽
Vol 6
◽
1993 ◽
Vol 32
(Part 1, No. 1B)
◽
pp. 438-441
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2011 ◽
Vol 50
(4)
◽
pp. 04DA11
◽