scholarly journals Room temperature on-wafer ballistic graphene field-effect-transistor with oblique double-gate

2016 ◽  
Vol 119 (24) ◽  
pp. 244305 ◽  
Author(s):  
Mircea Dragoman ◽  
Adrian Dinescu ◽  
Daniela Dragoman
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Double Gate ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

Enhanced transconductance in a double-gate graphene field-effect transistor

2018 ◽  
Vol 141 ◽  
pp. 65-68 ◽  
Author(s):  
Byeong-Woon Hwang ◽  
Hye-In Yeom ◽  
Daewon Kim ◽  
Choong-Ki Kim ◽  
Dongil Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Double Gate ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

scholarly journals Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature

2018 ◽  
Vol 10 (13) ◽  
pp. 10618-10621
Author(s):  
Sungsik Lee ◽  
Arokia Nathan ◽  
Jack Alexander-Webber ◽  
Philipp Braeuninger-Weimer ◽  
Abhay A. Sagade ◽  
...  
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Dirac Point ◽  
Carrier Injection ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Injection Barrier

Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications

2014 ◽  
Vol 25 (34) ◽  
pp. 345203 ◽  
Author(s):  
Amirhasan Nourbakhsh ◽  
Tarun K Agarwal ◽  
Alexander Klekachev ◽  
Inge Asselberghs ◽  
Mirco Cantoro ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Bilayer Graphene ◽  
Double Gate ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

2015 ◽  
Vol 3 (17) ◽  
pp. 4235-4238 ◽  
Author(s):  
Chang-Soo Park ◽  
Yu Zhao ◽  
Yoon Shon ◽  
Im Taek Yoon ◽  
Cheol Jin Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Chemical Vapor ◽  
Ferromagnetic Semiconductor ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

We report a ferromagnetic graphene field-effect transistor with a band gap.

Simultaneous achievement of superior response and full recovery of titanium dioxide/graphene hybrid FET sensors for NH3 through p- to n-mode switch

2020 ◽  
Vol 22 (29) ◽  
pp. 16701-16711 ◽  
Author(s):  
Attia Falak ◽  
Yi Tian ◽  
Lanqin Yan ◽  
Xianfeng Zhang ◽  
Lihua Xu ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Schottky Barrier ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Schottky Barrier Height ◽  
Mode Switch ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Sensing Performance

Ultrathin TiO2/graphene field effect transistor sensors with 100% titanium coverage (D100) favor the room temperature NH3 sensing performance at lower Schottky barrier height via switch in the sensing mode from p to n.

Sign in / Sign up

Export Citation Format

Share Document