Highly Enhanced Gas Sensing Performance Using a 1T/2H Heterophase MoS2 Field-Effect Transistor at Room Temperature

2020 ◽  
Vol 12 (45) ◽  
pp. 50610-50618
Author(s):  
Boyang Zong ◽  
Qiuju Li ◽  
Xiaoyan Chen ◽  
Chengbin Liu ◽  
Liangchun Li ◽  
...  
2020 ◽  
Vol 2 (7) ◽  
Author(s):  
Lorenzo Lopez ◽  
Vernalyn Copa ◽  
Takeshi Hayasaka ◽  
Maria Angela Faustino-Lopez ◽  
Yichuan Wu ◽  
...  

2020 ◽  
Vol 22 (29) ◽  
pp. 16701-16711 ◽  
Author(s):  
Attia Falak ◽  
Yi Tian ◽  
Lanqin Yan ◽  
Xianfeng Zhang ◽  
Lihua Xu ◽  
...  

Ultrathin TiO2/graphene field effect transistor sensors with 100% titanium coverage (D100) favor the room temperature NH3 sensing performance at lower Schottky barrier height via switch in the sensing mode from p to n.


2021 ◽  
Author(s):  
Salomé Forel ◽  
Leandro Sacco ◽  
Alice Castan ◽  
Ileana Florea ◽  
Costel Sorin Cojocaru

We design a gas sensor by combining two SWCNT-FET devices in an inverter configuration enabling a better system miniaturization together with a reduction of power consumption and ease of data processing.


2022 ◽  
Author(s):  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  
...  

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.


2012 ◽  
Vol 51 (11S) ◽  
pp. 11PE10
Author(s):  
Masayuki Ishii ◽  
Masahiro Terauchi ◽  
Takeshi Yoshimura ◽  
Tadachika Nakayama ◽  
Norifumi Fujimura

2012 ◽  
Vol 51 ◽  
pp. 11PE10
Author(s):  
Masayuki Ishii ◽  
Masahiro Terauchi ◽  
Takeshi Yoshimura ◽  
Tadachika Nakayama ◽  
Norifumi Fujimura

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