Improved Room Temperature NO2 Sensing Performance of Organic Field-Effect Transistor by Directly Blending a Hole-Transporting/Electron-Blocking Polymer into the Active Layer

2018 ◽  
Vol 10 (44) ◽  
pp. 38280-38286 ◽  
Author(s):  
Shijiao Han ◽  
Zuchong Yang ◽  
Zongkang Li ◽  
Xinming Zhuang ◽  
Deji Akinwande ◽  
...  
Keyword(s):  
Active Layer ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Hole Transporting ◽  
Effect Transistor ◽  
Sensing Performance

VTP as an Active Layer in a Vertical Organic Field Effect Transistor

2017 ◽  
Vol 47 (3) ◽  
pp. 2184-2191 ◽  
Author(s):  
Nur Adilah Roslan ◽  
Shahino Mah Abdullah ◽  
Muhammad Zharfan Mohd Halizan ◽  
Tahani M. Bawazeer ◽  
Nourah Alsenany ◽  
...  
Keyword(s):  
Active Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

An organic field effect transistor as a selective NOx sensor operated at room temperature

2009 ◽  
Vol 140 (2) ◽  
pp. 445-450 ◽  
Author(s):  
F. Marinelli ◽  
A. Dell’Aquila ◽  
L. Torsi ◽  
J. Tey ◽  
G.P. Suranna ◽  
...  
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Nox Sensor ◽  
Effect Transistor

scholarly journals Multi-functional organic field effect transistor based on a dual doped P3HT

2021 ◽  
Vol 8 (5) ◽  
pp. 823-835
Author(s):  
Thomas Debesay ◽  
◽  
Sam-Shajing Sun ◽  
Messaoud Bahoura ◽  
◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Organic Semiconductors ◽  
Active Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Characterization ◽  
Charge Carrier Mobility ◽  
Organic Field Effect Transistor ◽  
Effect Transistor ◽  
The Impact

<abstract> <p>A dual doped regio-regular poly(3-hexylthiophene-2, 5-diyl) (P3HT) was investigated to develop a multi-functional organic field effect transistor (OFET). OFETs based on a pristine P3HT and a dual doped P3HT (P3HT:PCBM:I<sub>2</sub> blend) were fabricated to study the impact of doping on the electrical properties of the samples, and to examine the mechanism through which it amplified the output performance of the doped OFETs. A series of experimental techniques such as device electrical characterization, active layer surface analysis, and photon absorptivity measurements were conducted to quantitatively characterize the principal parameters that are susceptible to change as a result of doping. Topographic mapping revealed the expected doping-induced improvements in surface morphology, which could be associated with the ability of iodine to improve interdigitation between adjacent P3HT chains. Similarly, absorption spectra showed a 3 nm red-shift of the light absorbance spectrum of the doped samples compared to the undoped samples. The electrical conductivity of the samples was also examined at various conditions of temperature and light intensity, and the values obtained from the doped sample were approximately one order of magnitude higher compared to those of the undoped sample at room temperature, which explains the reason behind the higher output current drawn from the doped device compared to that of the undoped OFET. The explanation for this is two-fold, both PCBM and iodine promote the generation of free charge carriers, which increases the electrical conductivity of the active layer; and in addition to that, the improved P3HT main-chain interdigitation brought about by the introduction of iodine results in an increase in charge-carrier mobility, which also results in higher electrical conductivity. The findings of this study offers valuable information that could be instrumental in further advancing the future organic semiconductors based studies.</p> </abstract>

New 3-((2′:2″,5″:2‴-terthiophene)-3″-yl) acrylic acid as active layer for organic field-effect transistor

2008 ◽  
Vol 111 (1) ◽  
pp. 1-4 ◽  
Author(s):  
N. Tjitra Salim ◽  
K.C. Aw ◽  
Hui Peng ◽  
Lijuan Zhang ◽  
J. Travas-Sejdic ◽  
...  
Keyword(s):  
Acrylic Acid ◽  
Active Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Simultaneous achievement of superior response and full recovery of titanium dioxide/graphene hybrid FET sensors for NH3 through p- to n-mode switch

2020 ◽  
Vol 22 (29) ◽  
pp. 16701-16711 ◽  
Author(s):  
Attia Falak ◽  
Yi Tian ◽  
Lanqin Yan ◽  
Xianfeng Zhang ◽  
Lihua Xu ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Schottky Barrier ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Schottky Barrier Height ◽  
Mode Switch ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Sensing Performance

Ultrathin TiO2/graphene field effect transistor sensors with 100% titanium coverage (D100) favor the room temperature NH3 sensing performance at lower Schottky barrier height via switch in the sensing mode from p to n.

Highly Enhanced Gas Sensing Performance Using a 1T/2H Heterophase MoS2 Field-Effect Transistor at Room Temperature

2020 ◽  
Vol 12 (45) ◽  
pp. 50610-50618
Author(s):  
Boyang Zong ◽  
Qiuju Li ◽  
Xiaoyan Chen ◽  
Chengbin Liu ◽  
Liangchun Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Gas Sensing ◽  
Effect Transistor ◽  
Sensing Performance
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