scholarly journals UV-enhanced atomic layer deposition of Al2O3 thin films at low temperature for gas-diffusion barriers

RSC Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 5601-5609 ◽  
Author(s):  
Kwan Hyuck Yoon ◽  
Hongbum Kim ◽  
Yong-Eun Koo Lee ◽  
Nabeen K. Shrestha ◽  
Myung Mo Sung
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Gas Diffusion ◽  
Diffusion Barriers ◽  
Layer Deposition ◽  
Low Deposition Temperature

We present UV-ALD as a promising approach to fabricate effective gas-diffusion barrier thin films at low deposition temperature (40 °C).

scholarly journals Low-temperature atomic layer deposition of crystalline manganese oxide thin films

2016 ◽  
Vol 45 (46) ◽  
pp. 18737-18741 ◽  
Author(s):  
Hua Jin ◽  
Dirk Hagen ◽  
Maarit Karppinen
Keyword(s):  
Thin Films ◽  
Phase Composition ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Manganese Oxide ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition

We present a new low-temperature atomic layer deposition (ALD) process based on Mn2(CO)10and ozone as precursors to fabricate crystalline α-Mn2O3and Mn3O4thin films; the phase composition is controlled by the deposition temperature such that the former phase forms in the range 60–100 °C and the latter in the range 120–160 °C.

Organic–inorganic hybrid semiconductor thin films deposited using molecular-atomic layer deposition (MALD)

2016 ◽  
Vol 4 (12) ◽  
pp. 2382-2389 ◽  
Author(s):  
Jie Huang ◽  
Hengji Zhang ◽  
Antonio Lucero ◽  
Lanxia Cheng ◽  
Santosh KC ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Inorganic Hybrid ◽  
Diethyl Zinc ◽  
Layer Deposition ◽  
Semiconductor Thin Films ◽  
Sharp Interfaces ◽  
Low Deposition Temperature

Molecular-atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic–inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition temperature.

Al 2 O 3 Thin Films Prepared by a Combined Thermal‐Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

2019 ◽  
Vol 217 (8) ◽  
pp. 1900237
Author(s):  
Zhen Zhu ◽  
Saoussen Merdes ◽  
Oili M. E. Ylivaara ◽  
Kenichiro Mizohata ◽  
Mikko J. Heikkilä ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thermal Plasma ◽  
Atomic Layer ◽  
Deposition Process ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition

scholarly journals Area‐Selective Growth of HfS 2 Thin Films via Atomic Layer Deposition at Low Temperature

2020 ◽  
Vol 7 (23) ◽  
pp. 2001493
Author(s):  
Yuanyuan Cao ◽  
Tobias Wähler ◽  
Hyoungwon Park ◽  
Johannes Will ◽  
Annemarie Prihoda ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Selective Growth ◽  
Layer Deposition

scholarly journals Nanocrystalline Ferroelectric BiFeO3 Thin Films by Low-Temperature Atomic Layer Deposition

2015 ◽  
Vol 27 (18) ◽  
pp. 6322-6328 ◽  
Author(s):  
Mariona Coll ◽  
Jaume Gazquez ◽  
Ignasi Fina ◽  
Zakariya Khayat ◽  
Andy Quindeau ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Bifeo3 Thin Films ◽  
Layer Deposition
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