Electrical properties of flexible multi-channel Si nanowire field-effect transistors depending on the number of Si nanowires

2016 ◽  
Vol 52 (42) ◽  
pp. 6938-6941 ◽  
Author(s):  
Do Hoon Kim ◽  
Su Jeong Lee ◽  
Sang Hoon Lee ◽  
Jae-Min Myoung
Keyword(s):  
Mechanical Properties ◽  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Si Nanowires ◽  
Si Nanowire

In order to secure high drain current and mobility of Si NW-based FETs, flexible multi-channel Si NW FETs were designed and their reliable electrical and mechanical properties were confirmed.

Tuning the Electrical Properties of Si Nanowire Field-Effect Transistors by Molecular Engineering

Small ◽  
2009 ◽  
Vol 5 (23) ◽  
pp. 2761-2769 ◽  
Author(s):  
Muhammad Y. Bashouti ◽  
Raymond T. Tung ◽  
Hossam Haick
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Molecular Engineering ◽  
Si Nanowire

ELECTRICAL PROPERTIES OF AlGaN/GaN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFETs) WITH AND WITHOUT Mg-DOPED CARRIER CONFINEMENT LAYER

2010 ◽  
Vol 09 (04) ◽  
pp. 263-267
Author(s):  
A. Sh. HUSSEIN ◽  
Z. HASSAN ◽  
H. ABU HASSAN ◽  
S. M. THAHAB
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Carrier Confinement ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Good Agreement ◽  
Mg Doped

AlGaN/GaN -based heterostructure field-effect transistors (HFETs) with and without Mg -doped semi-insulating carrier confinement layer were simulated by using ISE TCAD software, respectively. The detailed study on the electrical properties of these samples was performed. The effect of inserting Mg -doped GaN layer on the source–drain (S–D) leakage current was investigated. Higher values of drain current and extrinsic transconductance were achieved with conventional HFETs (without Mg -doped). The source-to-drain (S–D) leakage current of conventional HFETs was also higher. However, the S–D leakage current was reduced with the insertion of the Mg -doped semi-insulating carrier confinement layer. Our results are in good agreement with the experimental results obtained by other researchers.

scholarly journals Microwave-assisted calcination of electrospun indium–gallium–zinc oxide nanofibers for high-performance field-effect transistors

RSC Advances ◽  
2020 ◽  
Vol 10 (63) ◽  
pp. 38351-38356
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Mechanical Properties ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Indium Gallium Zinc Oxide ◽  
Microwave Assisted ◽  
Indium Gallium ◽  
Optical And Mechanical Properties

We report a systematic study on the microstructure and optical and mechanical properties of IGZO nanofibers for high performance field-effect transistors (FETs), as well as the effects of microwave-assisted calcination on the electrical properties and instability of FETs.

scholarly journals Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling

2021 ◽  
Vol 11 (1) ◽  
pp. 780
Author(s):  
Firas Natheer Abdul-Kadir ◽  
Yasir Hashim ◽  
Muhammad Nazmus Shakib ◽  
Faris Hassan Taha
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Drain Current ◽  
Oxide Thickness ◽  
Si Nanowire ◽  
Effect Transistor ◽  
Current Characteristics

This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.

Preparation of integrated chemical sensors using commercial VLSI technology

1987 ◽  
Vol 65 (5) ◽  
pp. 1072-1078 ◽  
Author(s):  
Paul G. Glavina ◽  
D. Jed Harrison
Keyword(s):  
Chemical Sensors ◽  
Linear Response ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Microelectrode Arrays ◽  
Drain Current ◽  
Cyclic Voltammetric ◽  
Design Rules ◽  
Vlsi Technology ◽  
Commercial Technology

The fabrication of ion sensitive field effect transistors (ISFET) and microelectrode arrays for use as chemical sensors using a commercial CMOS fabrication process is described. The commercial technology is readily available through the Canadian Microelectronics Corporation; however, several of the recommended design rules must be ignored in preparing chemical sensors using this process. The ISFET devices show near theoretical response to K+ in aqueous solution (55 mV slope) when coated with a K+ sensitive membrane. An extended gate ion sensitive device is presented which offers advantages in encapsulation of ISFET sensors. The source-drain current of both devices show a linear response to log [Formula: see text] in contrast to ISFETs previously reported that have high internal lead resistances. Al and poly-Si microelectrode arrays are fabricated commercially and then Pt is electrodeposited on the microelectrodes. The resulting arrays show good cyclic voltammetric response to Fe(CN)64− and Ru(NH3)63+ and are relatively durable.

AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer

2002 ◽  
Vol 743 ◽  
Author(s):  
Z. Y. Fan ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
Y. Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Heterostructure ◽  
Heterostructure Field Effect Transistors ◽  
Gate Control

ABSTRACTThe fabrication and characterization of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the δ-doped barrier are reported. The incorporation of the SiO2 insulated-gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the 2D channel carrier mobility. The device has a high drain-current-driving and gate-control capabilities as well as a very high gate-drain breakdown voltage of 200 V, a cutoff frequency of 15 GHz and a maximum frequency of oscillation of 34 GHz for a gate length of 1 μm. These characteristics indicate a great potential of this structure for high-power-microwave applications.

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