Electrical Properties of Thermally Annealed β-Ga2O3 Metal-Semiconductor Field-Effect Transistors with Pt/Au Schottky Contacts

2019 ◽  
Vol 8 (7) ◽  
pp. Q3122-Q3125
Author(s):  
Suhyun Kim ◽  
Jihyun Kim
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Schottky Contacts

Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

2018 ◽  
Vol 113 (6) ◽  
pp. 062103 ◽  
Author(s):  
Tae-Eon Bae ◽  
Kimihiko Kato ◽  
Ryota Suzuki ◽  
Ryosho Nakane ◽  
Mitsuru Takenaka ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Impurity Concentration ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Field Effect Transistors

Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors

2019 ◽  
Vol 481 ◽  
pp. 632-636 ◽  
Author(s):  
Yu Yang ◽  
Jiayan Yang ◽  
Wenlei Yin ◽  
Fanming Huang ◽  
Anyang Cui ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Time ◽  
Field Effect ◽  
Field Effect Transistors ◽  
P Type

Influence of solvent additives on the morphology and electrical properties of diF-TES ADT organic field-effect transistors

2019 ◽  
Vol 68 ◽  
pp. 205-211 ◽  
Author(s):  
Carla Patricia Lacerda Rubinger ◽  
Hamna F. Haneef ◽  
Corey Hewitt ◽  
David Carroll ◽  
John E. Anthony ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Influence Of Solvent

scholarly journals Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1804 ◽  
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Oxygen Plasma Treatment ◽  
Calcination Process ◽  
Microwave Annealing ◽  
High K

We investigated the effects of various high-k gate dielectrics as well as microwave annealing (MWA) calcination and a postcalcination oxygen plasma treatment on the electrical properties and stability of electrospun indium gallium zinc oxide (IGZO)-nanofiber (NF)-based field-effect transistors (FETs). We found that the higher the dielectric constant of the gate dielectric, the better the electric field is transferred, resulting in the better performance of the IGZO NF FET. In addition, the MWA-calcined IGZO NF FET was superior to the conventional furnace annealing-calcined device in terms of the electrical properties of the device and the operation of resistor-loaded inverter, and it was proved that the oxygen plasma treatment further improved the performance. The results of the gate bias temperature stress test confirmed that the MWA calcination process and postcalcination oxygen plasma treatment greatly improved the stability of the IGZO NF FET by reducing the number of defects and charge traps. This verified that the MWA calcination process and oxygen plasma treatment effectively remove the organic solvent and impurities that act as charge traps in the chemical analysis of NF using X-ray photoelectron spectroscopy. Furthermore, it was demonstrated through scanning electron microscopy and ultraviolet-visible spectrophotometer that the MWA calcination process and postcalcination oxygen plasma treatment also improve the morphological and optical properties of IGZO NF.

HfO2 dielectric thickness dependence of electrical properties in graphene field effect transistors with double conductance minima

2015 ◽  
Vol 118 (14) ◽  
pp. 144301 ◽  
Author(s):  
Cheng Zhang ◽  
Dan Xie ◽  
Jian-Long Xu ◽  
Xin-Ming Li ◽  
Yi-Lin Sun ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Thickness Dependence ◽  
Dielectric Thickness
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