scholarly journals Microwave-assisted calcination of electrospun indium–gallium–zinc oxide nanofibers for high-performance field-effect transistors

RSC Advances ◽  
2020 ◽  
Vol 10 (63) ◽  
pp. 38351-38356
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Mechanical Properties ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Indium Gallium Zinc Oxide ◽  
Microwave Assisted ◽  
Indium Gallium ◽  
Optical And Mechanical Properties

We report a systematic study on the microstructure and optical and mechanical properties of IGZO nanofibers for high performance field-effect transistors (FETs), as well as the effects of microwave-assisted calcination on the electrical properties and instability of FETs.

Properties ofc-axis-aligned crystalline indium–gallium–zinc oxide field-effect transistors fabricated through a tapered-trench gate process

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EG09 ◽  
Author(s):  
Yoshinobu Asami ◽  
Motomu Kurata ◽  
Yutaka Okazaki ◽  
Eiji Higa ◽  
Daisuke Matsubayashi ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium

A normally-off microcontroller unit with an 85% power overhead reduction based on crystalline indium gallium zinc oxide field effect transistors

2014 ◽  
Vol 53 (4S) ◽  
pp. 04EE02 ◽  
Author(s):  
Kazuaki Ohshima ◽  
Hidetomo Kobayashi ◽  
Tatsuji Nishijima ◽  
Seiichi Yoneda ◽  
Hiroyuki Tomatsu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Indium Gallium Zinc Oxide ◽  
Indium Gallium ◽  
Microcontroller Unit

scholarly journals Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor

2020 ◽  
Vol 1 (2) ◽  
pp. 14-21
Author(s):  
Chaw Su Nandar Hlaing Chaw ◽  
Thiri Nwe
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Characteristic Curve ◽  
Vital Role ◽  
Semiconductor Material ◽  
Mathematical Equations ◽  
Effect Transistor

This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.

Inkjet printing of homogeneous and green cellulose nanofibril dielectrics for high performance IGZO TFTs

2020 ◽  
Vol 8 (36) ◽  
pp. 12578-12586 ◽  
Author(s):  
Shangxiong Zhou ◽  
Jianhua Zhang ◽  
Xiaoping Guo ◽  
Honglong Ning ◽  
Dong Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Inkjet Printing ◽  
Thin Film Transistors ◽  
High Performance ◽  
Environmentally Friendly ◽  
Indium Gallium Zinc Oxide ◽  
Cellulose Nanofibril ◽  
Functional Nanomaterials ◽  
Indium Gallium

Inkjet printing of environmentally friendly functional nanomaterials for high performance indium–gallium–zinc oxide (IGZO) thin film transistors (TFTs) is highly in demand for the development of inexpensive and green electronics.

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

2020 ◽  
Vol 30 (34) ◽  
pp. 2003285 ◽  
Author(s):  
Yepin Zhao ◽  
Zhengxu Wang ◽  
Guangwei Xu ◽  
Le Cai ◽  
Tae‐Hee Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Interface Engineering ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
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