Dependences of the Electrical Properties on the Diameter and the Doping Concentration of the Si Nanowire Field Effect Transistors with a Schottky Metal-Semiconductor Contact

2010 ◽  
Vol 10 (5) ◽  
pp. 3609-3613 ◽  
Author(s):  
Joo Hyung You ◽  
Se Han Lee ◽  
Chan Ho You ◽  
Yun Seop Yu ◽  
Tae Whan Kim
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Doping Concentration ◽  
Field Effect Transistors ◽  
Si Nanowire ◽  
Semiconductor Contact

Tuning the Electrical Properties of Si Nanowire Field-Effect Transistors by Molecular Engineering

Small ◽  
2009 ◽  
Vol 5 (23) ◽  
pp. 2761-2769 ◽  
Author(s):  
Muhammad Y. Bashouti ◽  
Raymond T. Tung ◽  
Hossam Haick
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Molecular Engineering ◽  
Si Nanowire

Electrical properties of flexible multi-channel Si nanowire field-effect transistors depending on the number of Si nanowires

2016 ◽  
Vol 52 (42) ◽  
pp. 6938-6941 ◽  
Author(s):  
Do Hoon Kim ◽  
Su Jeong Lee ◽  
Sang Hoon Lee ◽  
Jae-Min Myoung
Keyword(s):  
Mechanical Properties ◽  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Si Nanowires ◽  
Si Nanowire

In order to secure high drain current and mobility of Si NW-based FETs, flexible multi-channel Si NW FETs were designed and their reliable electrical and mechanical properties were confirmed.

scholarly journals Effects of Doping Concentration on Device Performance of GaN-based Nano-regime MOSFETs

2017 ◽  
Vol 16 (1) ◽  
pp. 69-74
Author(s):  
Md Iktiham Bin Taher ◽  
Md. Tanvir Hasan
Keyword(s):  
Field Effect ◽  
Doping Concentration ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Gate Length ◽  
Drain Voltage ◽  
Switching Device ◽  
Device Applications

Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are promising for switching device applications. The doping of n- and p-layers is varied to evaluate the figure of merits of proposed devices with a gate length of 10 nm. Devices are switched from OFF-state (gate voltage, VGS = 0 V) to ON-state (VGS = 1 V) for a fixed drain voltage, VDS = 0.75 V. The device with channel doping of 1×1016 cm-3 and source/drain (S/D) of 1×1020 cm-3 shows good device performance due to better control of gate over channel. The ON-current (ION), OFF-current (IOFF), subthreshold swing (SS), drain induce barrier lowering (DIBL), and delay time are found to be 6.85 mA/μm, 5.15×10-7 A/μm, 87.8 mV/decade, and 100.5 mV/V, 0.035 ps, respectively. These results indicate that GaN-based MOSFETs are very suitable for the logic switching application in nanoscale regime.

Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

2018 ◽  
Vol 113 (6) ◽  
pp. 062103 ◽  
Author(s):  
Tae-Eon Bae ◽  
Kimihiko Kato ◽  
Ryota Suzuki ◽  
Ryosho Nakane ◽  
Mitsuru Takenaka ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Impurity Concentration ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Field Effect Transistors
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