Tuning the Electrical Properties of Si Nanowire Field-Effect Transistors by Molecular Engineering

Small ◽  
2009 ◽  
Vol 5 (23) ◽  
pp. 2761-2769 ◽  
Author(s):  
Muhammad Y. Bashouti ◽  
Raymond T. Tung ◽  
Hossam Haick
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Molecular Engineering ◽  
Si Nanowire

Electrical properties of flexible multi-channel Si nanowire field-effect transistors depending on the number of Si nanowires

2016 ◽  
Vol 52 (42) ◽  
pp. 6938-6941 ◽  
Author(s):  
Do Hoon Kim ◽  
Su Jeong Lee ◽  
Sang Hoon Lee ◽  
Jae-Min Myoung
Keyword(s):  
Mechanical Properties ◽  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Si Nanowires ◽  
Si Nanowire

In order to secure high drain current and mobility of Si NW-based FETs, flexible multi-channel Si NW FETs were designed and their reliable electrical and mechanical properties were confirmed.

Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

2018 ◽  
Vol 113 (6) ◽  
pp. 062103 ◽  
Author(s):  
Tae-Eon Bae ◽  
Kimihiko Kato ◽  
Ryota Suzuki ◽  
Ryosho Nakane ◽  
Mitsuru Takenaka ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Impurity Concentration ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Field Effect Transistors

Fabrication and Characterization of P-implanted Si-nanowire Field-effect Transistors (n-SiNW FETs)

2009 ◽  
Vol 55 (1) ◽  
pp. 28-31 ◽  
Author(s):  
Seung-Yong Lee ◽  
Chan-Oh Jang ◽  
Jung-Hwan Hyung ◽  
Dong-Joo Kim ◽  
Tae-Hong Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Si Nanowire ◽  
Fabrication And Characterization
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