Electronic transport characteristics in silicon nanotube field-effect transistors

2011 ◽  
Vol 43 (9) ◽  
pp. 1655-1658 ◽  
Author(s):  
Guangcun Shan ◽  
Yu Wang ◽  
Wei Huang
2017 ◽  
Vol 5 (6) ◽  
pp. 1409-1413 ◽  
Author(s):  
E. Montes ◽  
U. Schwingenschlögl

Hydrogen passivated silicon nanotube field effect transistors are predicted to combine high transconductance with low sub-threshold swing.


Nanoscale ◽  
2014 ◽  
Vol 6 (14) ◽  
pp. 7847-7852 ◽  
Author(s):  
Soonshin Kwon ◽  
Zack C. Y. Chen ◽  
Hyunwoo Noh ◽  
Ju Hun Lee ◽  
Hang Liu ◽  
...  

Crystalline silicon nanotubes exhibit high electrical mobility, while demonstrating loading of biomolecules inside for the first time.


2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Tingting Wei ◽  
Teruo Kanki ◽  
Masashi Chikanari ◽  
Takafumi Uemura ◽  
Tsuyoshi Sekitani ◽  
...  

2018 ◽  
Vol 10 (6) ◽  
Author(s):  
Jiseok Kwon ◽  
Abhijith Prakash ◽  
Suprem R. Das ◽  
David B. Janes

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