Selective functionalization and loading of biomolecules in crystalline silicon nanotube field-effect-transistors

Nanoscale ◽  
2014 ◽  
Vol 6 (14) ◽  
pp. 7847-7852 ◽  
Author(s):  
Soonshin Kwon ◽  
Zack C. Y. Chen ◽  
Hyunwoo Noh ◽  
Ju Hun Lee ◽  
Hang Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Crystalline Silicon ◽  
Field Effect Transistors ◽  
Electrical Mobility ◽  
Silicon Nanotubes ◽  
Selective Functionalization ◽  
First Time ◽  
Silicon Nanotube

Crystalline silicon nanotubes exhibit high electrical mobility, while demonstrating loading of biomolecules inside for the first time.

Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

2017 ◽  
Vol 5 (6) ◽  
pp. 1409-1413 ◽  
Author(s):  
E. Montes ◽  
U. Schwingenschlögl
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanotubes ◽  
High Transconductance ◽  
Passivated Silicon ◽  
Silicon Nanotube

Hydrogen passivated silicon nanotube field effect transistors are predicted to combine high transconductance with low sub-threshold swing.

scholarly journals Photocontrolled organic field effect transistors based on the fullerene C60 and spiropyran hybrid molecule

RSC Advances ◽  
2019 ◽  
Vol 9 (13) ◽  
pp. 7505-7508 ◽  
Author(s):  
A. R. Tuktarov ◽  
R. B. Salikhov ◽  
A. A. Khuzin ◽  
N. R. Popod'ko ◽  
I. N. Safargalin ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Active Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Fullerene C60 ◽  
Organic Field Effect Transistors ◽  
Hybrid Molecule ◽  
Hybrid Compound ◽  
First Time

Photocontrolled organic field-effect transistors (OFETs) containing a hybrid compound of fullerene C60 (n-semiconductor) with spiropyran (electrical conductivity photocontroller) as the active layer were fabricated for the first time.

scholarly journals Donor-Acceptor Interaction in Films of Tetracene–Tetracyanoquinodimethane Heterostructures and Composites

2018 ◽  
Vol 63 (1) ◽  
pp. 70
Author(s):  
M. P. Gorishnyi ◽  
A. B. Verbitsky
Keyword(s):  
Thin Films ◽  
Absorption Spectra ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Composite Films ◽  
Charge Transfer Complexes ◽  
Acceptor Interaction ◽  
Light Emitting ◽  
Donor Acceptor ◽  
First Time

The structures and the absorption and photovoltaic spectra of thin films of tetracene (TC) and tetracyanoquinodimethane (TCNQ), as well as the films of their heterostructures (TC/TCNQ) and composites (TC + TCNQ), have been studied. The heterostructures and composites are obtained by the thermal sputtering of the components – successively or simultaneously, respectively – in vacuum. The photovoltaic spectra were measured, by using the condenser method. It is found for the first time that the largest changes ΔD1 in the TC/TCNQ and TC + TCNQ absorption spectra with respect to the sum of the absorption spectra of the components are observed in the intervals of TCNQ dimeric bands at 2.214 eV (ΔD1 < 0) and in all TC bands (ΔD1 > 0). Those changes testify to the formation of charge transfer complexes between the TC (the electron donor) and TCNQ (the electron acceptor) molecules at the interfaces in the TC/TCNQ heterostructures and in the bulk of TC + TCNQ composites, which is also confirmed by the appearance of TC+- and TCNQ−-bands in the photovoltaic spectra of both the heterostructure and composite films. This result is important for a deeper understanding of the operating mechanisms in various potentially imaginable devices based on those heterostructures and composites (solar cells, field-effect transistors, and light-emitting diodes).

scholarly journals Carbon-paste nanocomposites as unconventional gate electrodes for electrolyte-gated organic field-effect transistors: electrical modulation and bio-sensing

2019 ◽  
Vol 7 (47) ◽  
pp. 14993-14998 ◽  
Author(s):  
Jose Muñoz ◽  
Francesca Leonardi ◽  
Tayfun Özmen ◽  
Marta Riba-Moliner ◽  
Arantzazu González-Campo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Carbon Paste ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Sensing Applications ◽  
Electrical Modulation ◽  
First Time

Nanocomposite carbon-paste electrodes (NC-CPEs) have been investigated for the first time in electrolyte-gated organic field-effect transistors (EGOFETs) as a replacement of conventional metal gate electrodes for bio-sensing applications.

Modeling and Fabrication of GeOx-Ge Cladded Quantum Dot Channel (QDC) FETs on Poly-Silicon

2018 ◽  
Vol 27 (01n02) ◽  
pp. 1840005
Author(s):  
Jun Kondo ◽  
Pial Mirdha ◽  
Barath Parthasarathy ◽  
Pik-Yiu Chan ◽  
Bander Saman ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Field Effect ◽  
Gate Dielectric ◽  
Crystalline Silicon ◽  
Field Effect Transistors ◽  
Silicon On Insulator ◽  
Poly Silicon ◽  
Ge Quantum Dots ◽  
High K Dielectric

Quantum dot channel (QDC) and Quantum dot gate (QDG) field effect transistors (FETs) have been fabricated on crystalline Si using cladded Si and Ge quantum dots. This paper presents fabrication and modeling of quantum dot channel field effect transistors (QDC-FETs) using cladded Ge quantum dots on poly-Si thin films grown on silicon-on-insulator (SOI) substrates. HfAlO2 high-k dielectric layers are used for the gate dielectric. QDC-FETs exhibit multi-state I-V characteristics which enable two-bit processing, and reduce FET count and power dissipation. QDC-FETs using germanium quantum dots provide higher electron mobility than conventional poly-silicon FETs, and mobility values comparable to conventional FETs using single crystalline silicon.

Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors

2014 ◽  
Vol 95 ◽  
pp. 136-145 ◽  
Author(s):  
Thomas Mikolajick ◽  
Stefan Müller ◽  
Tony Schenk ◽  
Ekaterina Yurchuk ◽  
Stefan Slesazeck ◽  
...  
Keyword(s):  
Data Storage ◽  
Hafnium Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Current Status ◽  
Standard Material ◽  
Ferroelectric Memory ◽  
Ferroelectric Memories ◽  
Ferroelectric Hysteresis ◽  
First Time

Ferroelectrics are very interesting materials for nonvolatile data storage due to the fact that they deliver very low power programming operation combined with nonvolatile retention. For 60 years researchers have been inspired by these fascinating possibilities and have tried to build ferroelectric memory devices that can compete with mainstream technologies in their respective time. The progress of the current concepts is limited by the low compatibility of ferroelectrics like PZT with CMOS processing. Therefore, PZT or SBT based 1T1C ferroelectric memories are not scaling below 130 nm and 1T ferroelectric FETs based on the same materials are still struggling with low retention and very thick memory stacks. Hafnium oxide, a standard material in sub 45 nm CMOS, can show ferroelectric hysteresis with promising characteristics. By adding a few percent of silicon and annealing the films in a mechanically confined manner. Boescke et al. demonstrated ferroelectric hysteresis in hafnium oxide for the first time. Recently, a large number of dopants including Y, Al, Gd and Sr have been used to induce ferroelectricity in HfO2. This paper reviews the current status of hafnium oxide based ferroelectrics, its application to field effect transistors and puts this approach into a wider context of earlier developments in the field.

scholarly journals A Low-Power Biomimetic Crypto Engine for All-In-One IoT based on Programmable and Multifunctional MoS2 FETs

2021 ◽  
Author(s):  
Saptarshi Das ◽  
Akhil Dodda
Keyword(s):  
Internet Of Things ◽  
Low Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Energy Budgets ◽  
Iot Platform ◽  
Artificial Neural ◽  
First Time

Abstract In the emerging era of internet of things (IoT), ubiquitous sensors continuously collect, consume, store, and communicate an astonishing volume of information, which are becoming increasingly vulnerable to theft and misuse. Modern software crypto systems are powerful but require extensive computational infrastructure for implementing ciphering algorithms making it difficult to be adopted by IoT edge sensors that operate with limited hardware resources and at miniscule energy budgets. Here we propose, and experimentally demonstrate a low-power, biomimetic, crypto system integrated with IoT edge sensor based on an array of atomically thin, multifunctional, and programmable MoS2 field effect transistors (FETs). We show that the information received by a MoS2 photodetector and encrypted by a population of MoS2 based reconfigurable artificial neural encoders is secure from an eavesdropper with finite resources. We also show that our all-in-one IoT platform consumes miniscule energy in the range of tens to hundreds of pico Joules, has a small hardware footprint, and combines sensing, non-volatile storage, and security, for the first time.

A bowl-shaped sumanene derivative with dense convex–concave columnar packing for high-performance organic field-effect transistors

2017 ◽  
Vol 53 (83) ◽  
pp. 11407-11409 ◽  
Author(s):  
Beibei Fu ◽  
Xueqing Hou ◽  
Cong Wang ◽  
Yu Wang ◽  
Xiaotao Zhang ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Single Crystal ◽  
Field Effect ◽  
High Performance ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect ◽  
First Time

The charge carrier mobility of a sumanene derivative was probed using single-crystal field-effect transistors for the first time.

Assembly, Stability, and Electrical Properties of Sparse Crystalline Silicon Nanoparticle Networks Applied to Solution-Processed Field-Effect Transistors

2020 ◽  
Vol 2 (3) ◽  
pp. 692-700
Author(s):  
Domenikos Chryssikos ◽  
Markus Wiesinger ◽  
Oliver Bienek ◽  
Hartmut Wiggers ◽  
Martin Stutzmann ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Crystalline Silicon ◽  
Field Effect Transistors ◽  
Silicon Nanoparticle ◽  
Solution Processed
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