scholarly journals Correlating Electronic Transport and 1/ f Noise in MoSe2 Field-Effect Transistors

2018 ◽  
Vol 10 (6) ◽  
Author(s):  
Jiseok Kwon ◽  
Abhijith Prakash ◽  
Suprem R. Das ◽  
David B. Janes
Keyword(s):  
Electronic Transport ◽  
Field Effect ◽  
Field Effect Transistors

scholarly journals Enhanced electronic-transport modulation in single-crystalline VO2 nanowire-based solid-state field-effect transistors

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Tingting Wei ◽  
Teruo Kanki ◽  
Masashi Chikanari ◽  
Takafumi Uemura ◽  
Tsuyoshi Sekitani ◽  
...  
Keyword(s):  
Solid State ◽  
Electronic Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Crystalline ◽  
Transport Modulation

Electronic Transport in Organic Ferroelectric Gate Field-Effect Transistors with ZnO Channel

2012 ◽  
Vol 1430 ◽  
Author(s):  
Hiroaki Yamada ◽  
Takeshi Yoshimura ◽  
Norifumi Fujimura
Keyword(s):  
Hall Effect ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Electronic Transport ◽  
Hall Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hall Effect Measurement ◽  
Field Effect Mobility ◽  
Channel Thickness

ABSTRACTThe electronic transport properties of the organic ferroelectric gate field-effect transistors (FeFETs) with the ZnO channel were investigated. The FeFETs with the channel thickness below 100 nm show nonvolatile operation and the on/off ratio of 105. The field-effect mobility decreased with decreasing the channel thickness. From the Hall-effect measurement, it was found that the Hall mobility increases and the carrier concentration decreases after the deposition of the organic ferroelectric gate. From these results, the effect of the ferroelectric polarization on the electronic transport in the FeFETs was discussed.

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