Effect of the orientation of nitro group on the electronic transport properties in single molecular field-effect transistors

2013 ◽  
Vol 15 (3) ◽  
pp. 832-836 ◽  
Author(s):  
Yuqing Xu ◽  
Bin Cui ◽  
Guomin Ji ◽  
Dongmei Li ◽  
Desheng Liu
Keyword(s):  
Transport Properties ◽  
Nitro Group ◽  
Electronic Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Molecular Field ◽  
Electronic Transport Properties

Electronic transport properties of carbon and boron nitride chain heterojunctions

2017 ◽  
Vol 5 (5) ◽  
pp. 1165-1178 ◽  
Author(s):  
Yi Zhou ◽  
Yifan Li ◽  
Jie Li ◽  
Jichen Dong ◽  
Hui Li
Keyword(s):  
Boron Nitride ◽  
Transport Properties ◽  
Electronic Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Free Standing ◽  
Electronic Transport Properties ◽  
Carbon Chains ◽  
On Chip ◽  
Transport Channels

Long, stable, and free-standing linear atomic carbon chains and boron nitride (BN) chains have been carved out from their 2D sheets recently [Meyer et al., Nature, 2008, 454(7202), 319; Jin et al. Phys. Rev. Lett., 2009, 102(20), 205501; Cretu et al., ACS Nano, 2014, 8(12), 11950], which could be used as transport channels or on-chip interconnects for field-effect transistors.

Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers

2013 ◽  
Vol 103 (6) ◽  
pp. 063109 ◽  
Author(s):  
Jiadan Lin ◽  
Jianqiang Zhong ◽  
Shu Zhong ◽  
Hai Li ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electronic Transport Properties ◽  
Effect Transistor

Electronic Transport in Organic Ferroelectric Gate Field-Effect Transistors with ZnO Channel

2012 ◽  
Vol 1430 ◽  
Author(s):  
Hiroaki Yamada ◽  
Takeshi Yoshimura ◽  
Norifumi Fujimura
Keyword(s):  
Hall Effect ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Electronic Transport ◽  
Hall Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hall Effect Measurement ◽  
Field Effect Mobility ◽  
Channel Thickness

ABSTRACTThe electronic transport properties of the organic ferroelectric gate field-effect transistors (FeFETs) with the ZnO channel were investigated. The FeFETs with the channel thickness below 100 nm show nonvolatile operation and the on/off ratio of 105. The field-effect mobility decreased with decreasing the channel thickness. From the Hall-effect measurement, it was found that the Hall mobility increases and the carrier concentration decreases after the deposition of the organic ferroelectric gate. From these results, the effect of the ferroelectric polarization on the electronic transport in the FeFETs was discussed.

ELECTRONIC TRANSPORT PROPERTIES OF SILICON NANOWIRE CAGE

2018 ◽  
Author(s):  
Shenqiu Mo ◽  
Dengke Ma ◽  
Lina Yang ◽  
Meng An ◽  
Zhiyu Liu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Nanowire ◽  
Electronic Transport Properties

Improved thermoelectric transport properties of Ge4Se3Te through dimensionality reduction

2021 ◽  
Author(s):  
H. H. Huang ◽  
Xiaofeng Fan ◽  
Wei Tao Zheng ◽  
David J. Singh
Keyword(s):  
Dimensionality Reduction ◽  
Transport Properties ◽  
Electronic Transport ◽  
Thermoelectric Transport ◽  
Electronic Transport Properties ◽  
Thermoelectric Transport Properties

Layered semiconducting Ge4Se3Te shows unusual bonding that suggests the possibility of unusual transport that may be favorable for thermoelectrics. We investigated the electronic transport properties in relation to thermoelectricity of...

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