Effect of nitrogen doping on denuded zone formed by rapid thermal process in Czochralski silicon wafer

2006 ◽  
Vol 376-377 ◽  
pp. 216-219 ◽  
Author(s):  
Can Cui ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Ruixin Fan ◽  
Liben Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Thermal Process ◽  
Nitrogen Doping ◽  
Rapid Thermal Process ◽  
Czochralski Silicon

Effect of Rapid Thermal Process on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon Wafer

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Vol 42 (Part 1, No. 12) ◽  
pp. 7290-7291 ◽  
Author(s):  
Chunlong Li ◽  
Xiangyang Ma ◽  
Jin Xu ◽  
Xuegong Yu ◽  
Deren Yang ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Thermal Process ◽  
Rapid Thermal Process ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Boron Doped

Nitrogen-doped Czochralski silicon treated in rapid thermal process

2006 ◽  
Vol 134 (2-3) ◽  
pp. 193-201 ◽  
Author(s):  
Deren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Investigation of rapid thermal process-induced defects in ion-implanted Czochralski silicon

1991 ◽  
Author(s):  
Charles B. Yarling ◽  
Sookap Hahn ◽  
David T. Hodul ◽  
Hisaaki Suga ◽  
Walter L. Smith
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Czochralski Silicon ◽  
Induced Defects ◽  
Ion Implanted

Oxide precipitation behavior in heavily doped silicon wafer after rapid thermal process

2006 ◽  
Vol 9 (1-3) ◽  
pp. 78-81 ◽  
Author(s):  
Shilong Sun ◽  
Weizhong Sun ◽  
Qiuyan Hao ◽  
Lijian Wang ◽  
Xiaoyun Teng ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Thermal Process ◽  
Precipitation Behavior ◽  
Rapid Thermal Process ◽  
Doped Silicon ◽  
Heavily Doped

scholarly journals Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

2015 ◽  
Vol 77 ◽  
pp. 76-89 ◽  
Author(s):  
Pierre-Olivier Logerais ◽  
Olivier Riou ◽  
Fabien Delaleux ◽  
Jean-Félix Durastanti ◽  
Anne Bouteville
Keyword(s):  
Silicon Wafer ◽  
Thermal Process ◽  
Thermal System ◽  
Rapid Thermal Process ◽  
Temperature Homogeneity

Effect of Nitrogen Doping on Oxygen Precipitate Profiles in Czochralski Silicon Wafer

2006 ◽  
Vol 45 (6A) ◽  
pp. 4903-4907 ◽  
Author(s):  
Can Cui ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Silicon Wafer ◽  
Nitrogen Doping ◽  
Czochralski Silicon ◽  
Oxygen Precipitate
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