Effect of annealing atmosphere on the recombination activity of copper precipitates formed by rapid thermal process in conventional and nitrogen-doped Czochralski silicon wafers

2008 ◽  
Vol 103 (1) ◽  
pp. 014912 ◽  
Author(s):  
Weiyan Wang ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Yuheng Zeng ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Silicon Wafers ◽  
Annealing Atmosphere ◽  
Rapid Thermal Process ◽  
Recombination Activity ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Nitrogen-doped Czochralski silicon treated in rapid thermal process

2006 ◽  
Vol 134 (2-3) ◽  
pp. 193-201 ◽  
Author(s):  
Deren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Effect of nitrogen doping on denuded zone formed by rapid thermal process in Czochralski silicon wafer

2006 ◽  
Vol 376-377 ◽  
pp. 216-219 ◽  
Author(s):  
Can Cui ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Ruixin Fan ◽  
Liben Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Thermal Process ◽  
Nitrogen Doping ◽  
Rapid Thermal Process ◽  
Czochralski Silicon

Investigation of rapid thermal process-induced defects in ion-implanted Czochralski silicon

1991 ◽  
Author(s):  
Charles B. Yarling ◽  
Sookap Hahn ◽  
David T. Hodul ◽  
Hisaaki Suga ◽  
Walter L. Smith
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Czochralski Silicon ◽  
Induced Defects ◽  
Ion Implanted

“Umbrella”-like precipitates in nitrogen-doped Czochralski silicon wafers

2004 ◽  
Vol 84 (11) ◽  
pp. 1889-1891 ◽  
Author(s):  
A. Kvit ◽  
A. Karoui ◽  
G. Duscher ◽  
G. A. Rozgonyi
Keyword(s):  
Silicon Wafers ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

2019 ◽  
Vol 3 (4) ◽  
pp. 89-96
Author(s):  
Deren Yang ◽  
Qiang Ma ◽  
Xiangyang Ma ◽  
Duanlin Duan
Keyword(s):  
Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Oxygen Precipitation
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