Investigation of rapid thermal process-induced defects in ion-implanted Czochralski silicon

1991 ◽  
Author(s):  
Charles B. Yarling ◽  
Sookap Hahn ◽  
David T. Hodul ◽  
Hisaaki Suga ◽  
Walter L. Smith
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Czochralski Silicon ◽  
Induced Defects ◽  
Ion Implanted

Nitrogen-doped Czochralski silicon treated in rapid thermal process

2006 ◽  
Vol 134 (2-3) ◽  
pp. 193-201 ◽  
Author(s):  
Deren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Effect of nitrogen doping on denuded zone formed by rapid thermal process in Czochralski silicon wafer

2006 ◽  
Vol 376-377 ◽  
pp. 216-219 ◽  
Author(s):  
Can Cui ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Ruixin Fan ◽  
Liben Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Thermal Process ◽  
Nitrogen Doping ◽  
Rapid Thermal Process ◽  
Czochralski Silicon

Rapid Thermal Process-Induced Defects : Gettering of Internal Contaminants

1989 ◽  
Vol 163 ◽  
Author(s):  
Bouchaib Hartiti ◽  
Wolfgang Eichhammer ◽  
Jean-Claude Muller ◽  
Paul Siffert
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Thermal Process ◽  
Deep Level ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Rapid Thermal Process ◽  
Slow Cooling ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Hydrogen Ion Implantation

AbstractWe show in this study that RTP-induced defects analysed by Deep Level Transient Spectroscopy (DLTS) are related to residual impurities present in as-grown silicon wafers. For one particular material an activation of a specific residual metallic impurity was observed in the temperature range 800 - 1000°C. This impurity can be returned to an electrically inactive precipitated form by classical thermal annealing (CTA) with a slow cooling rate or neutralized by means of low-energy hydrogen ion implantation.

Effect of Rapid Thermal Process on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon Wafer

2003 ◽  
Vol 42 (Part 1, No. 12) ◽  
pp. 7290-7291 ◽  
Author(s):  
Chunlong Li ◽  
Xiangyang Ma ◽  
Jin Xu ◽  
Xuegong Yu ◽  
Deren Yang ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Thermal Process ◽  
Rapid Thermal Process ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Boron Doped

Rapid thermal process-induced recombination centers in ion implanted silicon

1990 ◽  
Vol 50 (4) ◽  
pp. 405-410 ◽  
Author(s):  
W. Eichhammer ◽  
M. Hage-Ali ◽  
R. Stuck ◽  
P. Siffert
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Recombination Centers ◽  
Ion Implanted

Influence of rapid thermal process on intrinsic gettering in fast neutron irradiated Czochralski silicon

2006 ◽  
Vol 16 ◽  
pp. s109-s112
Author(s):  
Gui-feng CHEN ◽  
Yang-xian LI ◽  
Xing-hua LI ◽  
Li-li CAI ◽  
Qiao-yun MA ◽  
...  
Keyword(s):  
Fast Neutron ◽  
Thermal Process ◽  
Rapid Thermal Process ◽  
Czochralski Silicon
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