Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics

Microelectronic Engineering ◽

10.1016/j.mee.2015.04.080 ◽

2015 ◽

Vol 147 ◽

pp. 206-209 ◽

Cited By ~ 2

Author(s):

Donghwan Lim ◽

Woo Suk Jung ◽

Young Jin Kim ◽

Changhwan Choi

Keyword(s):

Gate Dielectrics ◽

Electrical Characteristics ◽

Mos Devices

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Process Uniformity and Electrical Characteristics of Thin Gate Dielectrics Grown by Ramped-Temperature Transient Rapid Thermal Oxidation of Silicon

MRS Proceedings ◽

10.1557/proc-146-319 ◽

1989 ◽

Vol 146 ◽

Author(s):

Mehrdad M. Moslehit ◽

Ahmad Kermani

Keyword(s):

Thermal Oxidation ◽

Gate Dielectrics ◽

Electrical Characteristics ◽

Thermal Cycles ◽

Gate Oxides ◽

Rapid Thermal Oxidation ◽

Mos Devices ◽

Overall Performance ◽

Process Uniformity ◽

Transient Thermal

ABSTRACTRapid thermal oxidation (RTO) of Si using transient linearly-ramped-temperature saw-toothed (LRT-ST) and triangular (LRT-TA) thermal cycles has been examined through evaluations of the process uniformity, slip dislocation patterns, and electrical characteristics of MOS devices. The strong effects of the thermal cycle parameters on process uniformity and slips indicate that the overall performance of an RTP tool must be specified both under the steady-state and transient thermal cycles. The electrical characteristics of MOS devices with LRT-grown gate oxides are comparable to those for devices with oxides grown by the trapezoidal thermal cycles.

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Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics

Electrochemical and Solid-State Letters ◽

10.1149/1.3457480 ◽

2010 ◽

Vol 13 (9) ◽

pp. G79 ◽

Cited By ~ 12

Author(s):

Shankar Swaminathan ◽

Paul C. McIntyre

Keyword(s):

Gate Dielectrics ◽

Electrical Characteristics ◽

Temperature Dependent ◽

Mos Devices

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Effects of Polystyrene Gate Dielectrics with Various Molecular Weights on Electrical Characteristics of Pentacene Thin-Film Transistors

Molecular Crystals and Liquid Crystals ◽

10.1080/15421406.2014.933384 ◽

2014 ◽

Vol 598 (1) ◽

pp. 129-134 ◽

Cited By ~ 1

Author(s):

Sung Woo Lee ◽

Dong Wook Kim ◽

Hyunji Shin ◽

Jong Sun Choi ◽

Jin-Hyuk Bae ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Dielectrics ◽

Electrical Characteristics ◽

Molecular Weights

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Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

IEEE Electron Device Letters ◽

10.1109/led.2003.812143 ◽

2003 ◽

Vol 24 (4) ◽

pp. 230-232 ◽

Cited By ~ 60

Author(s):

H.Y. Yu ◽

H.F. Lim ◽

J.H. Chen ◽

M.F. Li ◽

Chunxiang Zhu ◽

...

Keyword(s):

Electrical Characteristics ◽

Gate Electrode ◽

Mos Devices

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Optimised Multi-Scan H-Beam Annealing Of Mos Devices

MRS Proceedings ◽

10.1557/proc-4-789 ◽

1981 ◽

Vol 4 ◽

Cited By ~ 3

Author(s):

C J Pollard ◽

A E Glaccum ◽

J D Speight

Keyword(s):

Low Dose ◽

Gate Dielectrics ◽

Mos Devices ◽

Device Processing ◽

H Beam ◽

Mos Gate ◽

Mos Device

ABSTRACTThe optimum e-beam anneal conditions for damage free wafer annealing, implant activation uniformity across 3 inch wafers and low dose boron activation have been investigated with reference to the needs of MOS device processing. Some effects of e-beam annealing on MOS gate dielectrics are reported.

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