Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

2003 ◽  
Vol 24 (4) ◽  
pp. 230-232 ◽  
Author(s):  
H.Y. Yu ◽  
H.F. Lim ◽  
J.H. Chen ◽  
M.F. Li ◽  
Chunxiang Zhu ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Gate Electrode ◽  
Mos Devices

Electrical Characteristics and Thermal Stability of $ \hbox{Hf}_{x}\hbox{Ta}_{y}\hbox{Si}_{z}\hbox{N}$ Metal Gate Electrode for Advanced MOS Devices

2008 ◽  
Vol 55 (11) ◽  
pp. 3259-3266
Author(s):  
Chang-Ta Yang ◽  
Kuei-Shu Chang-Liao ◽  
Hsin-Chun Chang ◽  
Chung-Hao Fu ◽  
Tien-Ko Wang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Characteristics ◽  
Gate Electrode ◽  
Metal Gate ◽  
Mos Devices ◽  
Thermal Stability Of

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

2013 ◽  
Vol 740-742 ◽  
pp. 938-941
Author(s):  
Florian Chevalier ◽  
P. Brosselard ◽  
D. Tournier ◽  
G. Grosset ◽  
L. Dupuy ◽  
...  
Keyword(s):  
Design Methodology ◽  
Vertical Channel ◽  
Optimal Structure ◽  
Electrical Characteristics ◽  
Gate Electrode ◽  
Thermal Oxide ◽  
Dual Gate

This paper presents the methodology for the design of a novel 4H-SiC JFET structure able to sustain 3.3 kV. Comparisons between simulation and characterization res will be made. Taken into account the process limitation, we will also discuss the critical steps and their impact on the electrical characteristics. A design methodology based on Baliga's criterion is proposed to obtain the optimal structure. A 50 nm thick thermal oxide grown above vertical channel and the use of a buried p+ layer as second gate electrode are brand new in front of what is found in literature.

Fabrication and electrical characteristics of carbon nanotube field emission microcathodes with an integrated gate electrode

2001 ◽  
Vol 13 (1) ◽  
pp. 1-4 ◽  
Author(s):  
G Pirio ◽  
P Legagneux ◽  
D Pribat ◽  
K B K Teo ◽  
M Chhowalla ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Emission ◽  
Electrical Characteristics ◽  
Gate Electrode

High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 °C

2008 ◽  
Vol 600-603 ◽  
pp. 739-742 ◽  
Author(s):  
Ruby N. Ghosh ◽  
Reza Loloee ◽  
Tamara Isaacs-Smith ◽  
John R. Williams
Keyword(s):  
High Frequency ◽  
Operating Conditions ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Physical Processes ◽  
Large Area ◽  
Thermal Generation ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Minority Carriers

The operation of metal-oxide-semiconductor (MOS) devices based on the semiconductor SiC in high temperature environments above 300 °C requires an understanding of the physical processes in these capacitor structures under operating conditions. In this study we have focused on the regime of inversion biasing, where the electrical characteristics of the device are dominated by minority carriers. We report on the direct observation of the high frequency inversion capacitance due to thermal generation of holes in 6H-SiC n-MOS capacitors between 450 and 600 °C by monitoring the 1MHz C-V characteristics of large area, 1000 μm diameter, capacitors in the dark. Our experimental results are consistent with a first order calculation based on the delta depletion approximation.

Effects of gate electrode work function on electrical characteristics of pentacene-based field-effect devices

2010 ◽  
Vol 97 (9) ◽  
pp. 093301 ◽  
Author(s):  
Jaehoon Park ◽  
Hey Min Kim ◽  
Dong Wook Kim ◽  
Jong Sun Choi
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Electrical Characteristics ◽  
Gate Electrode ◽  
Field Effect Devices
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