Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics

2010 ◽  
Vol 13 (9) ◽  
pp. G79 ◽  
Author(s):  
Shankar Swaminathan ◽  
Paul C. McIntyre
Keyword(s):  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Temperature Dependent ◽  
Mos Devices

Process Uniformity and Electrical Characteristics of Thin Gate Dielectrics Grown by Ramped-Temperature Transient Rapid Thermal Oxidation of Silicon

1989 ◽  
Vol 146 ◽  
Author(s):  
Mehrdad M. Moslehit ◽  
Ahmad Kermani
Keyword(s):  
Thermal Oxidation ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Thermal Cycles ◽  
Gate Oxides ◽  
Rapid Thermal Oxidation ◽  
Mos Devices ◽  
Overall Performance ◽  
Process Uniformity ◽  
Transient Thermal

ABSTRACTRapid thermal oxidation (RTO) of Si using transient linearly-ramped-temperature saw-toothed (LRT-ST) and triangular (LRT-TA) thermal cycles has been examined through evaluations of the process uniformity, slip dislocation patterns, and electrical characteristics of MOS devices. The strong effects of the thermal cycle parameters on process uniformity and slips indicate that the overall performance of an RTP tool must be specified both under the steady-state and transient thermal cycles. The electrical characteristics of MOS devices with LRT-grown gate oxides are comparable to those for devices with oxides grown by the trapezoidal thermal cycles.

Analysis of temperature dependent electrical characteristics of Au/n-GaAs/GaAs structures in a wide temperature range

Vacuum ◽  
2008 ◽  
Vol 83 (2) ◽  
pp. 276-281 ◽  
Author(s):  
A. Bengi ◽  
S. Altındal ◽  
S. Özçelik ◽  
S.T. Agaliyeva ◽  
T.S. Mammadov
Keyword(s):  
Wide Temperature Range ◽  
Electrical Characteristics ◽  
Temperature Dependent ◽  
Temperature Range

Effects of Polystyrene Gate Dielectrics with Various Molecular Weights on Electrical Characteristics of Pentacene Thin-Film Transistors

2014 ◽  
Vol 598 (1) ◽  
pp. 129-134 ◽  
Author(s):  
Sung Woo Lee ◽  
Dong Wook Kim ◽  
Hyunji Shin ◽  
Jong Sun Choi ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Molecular Weights

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

2003 ◽  
Vol 24 (4) ◽  
pp. 230-232 ◽  
Author(s):  
H.Y. Yu ◽  
H.F. Lim ◽  
J.H. Chen ◽  
M.F. Li ◽  
Chunxiang Zhu ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Gate Electrode ◽  
Mos Devices

Optimised Multi-Scan H-Beam Annealing Of Mos Devices

1981 ◽  
Vol 4 ◽  
Author(s):  
C J Pollard ◽  
A E Glaccum ◽  
J D Speight
Keyword(s):  
Low Dose ◽  
Gate Dielectrics ◽  
Mos Devices ◽  
Device Processing ◽  
H Beam ◽  
Mos Gate ◽  
Mos Device

ABSTRACTThe optimum e-beam anneal conditions for damage free wafer annealing, implant activation uniformity across 3 inch wafers and low dose boron activation have been investigated with reference to the needs of MOS device processing. Some effects of e-beam annealing on MOS gate dielectrics are reported.

Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

2005 ◽  
Vol 252 (4) ◽  
pp. 1153-1158 ◽  
Author(s):  
Enise Ayyildiz ◽  
Hidayet Cetin ◽  
Zs. J. Horváth
Keyword(s):  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Temperature Dependent

scholarly journals Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors

2013 ◽  
Vol 8 (1) ◽  
pp. 18 ◽  
Author(s):  
Fa-Hsyang Chen ◽  
Jim-Long Her ◽  
Yu-Hsuan Shao ◽  
Yasuhiro H Matsuda ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics
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