Remote plasma etching of titanium nitride using NF3/argon and chlorine mixtures for chamber clean applications

Ronald Hellriegel; Matthias Albert; Bernd Hintze; Hubert Winzig; J.W. Bartha

doi:10.1016/j.mee.2006.08.002

Remote plasma etching of titanium nitride using NF3/argon and chlorine mixtures for chamber clean applications

Microelectronic Engineering ◽

10.1016/j.mee.2006.08.002 ◽

2007 ◽

Vol 84 (1) ◽

pp. 37-41 ◽

Cited By ~ 12

Author(s):

Ronald Hellriegel ◽

Matthias Albert ◽

Bernd Hintze ◽

Hubert Winzig ◽

J.W. Bartha

Keyword(s):

Titanium Nitride ◽

Plasma Etching ◽

Remote Plasma

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Remote plasma enhanced atomic layer deposition of titanium nitride film using metal organic precursor (C12H23N3Ti) and N2 plasma

Applied Surface Science ◽

10.1016/j.apsusc.2020.148482 ◽

2020 ◽

pp. 148482

Author(s):

Byunguk Kim ◽

Namgue Lee ◽

Junghoon Lee ◽

Taehun Park ◽

Hyunwoo Park ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Titanium Nitride ◽

Atomic Layer ◽

Nitride Film ◽

Remote Plasma ◽

Organic Precursor ◽

Layer Deposition ◽

Metal Organic ◽

Titanium Nitride Film ◽

N2 Plasma

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Insitutechnique for measurement and control of transistor characteristics during remote plasma etching

Applied Physics Letters ◽

10.1063/1.105498 ◽

1991 ◽

Vol 59 (10) ◽

pp. 1188-1190

Author(s):

David Lishan ◽

Evelyn Hu

Keyword(s):

Plasma Etching ◽

Remote Plasma ◽

And Control ◽

Measurement And Control

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Dual‐function remote plasma etching/cleaning system applied to selective etching of SiO2 and removal of polymeric residues

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578599 ◽

1993 ◽

Vol 11 (5) ◽

pp. 2496-2507 ◽

Cited By ~ 8

Author(s):

T. Yasuda ◽

G. Lucovsky

Keyword(s):

Plasma Etching ◽

Selective Etching ◽

Dual Function ◽

Remote Plasma ◽

Cleaning System

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High density plasma etching of titanium nitride metal gate electrodes for fully depleted silicon-on-insulator subthreshold transistor integration

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3253533 ◽

2009 ◽

Vol 27 (6) ◽

pp. 2472 ◽

Cited By ~ 10

Author(s):

Steven A. Vitale ◽

Jakub Kedzierski ◽

Craig L. Keast

Keyword(s):

Titanium Nitride ◽

Plasma Etching ◽

High Density ◽

Silicon On Insulator ◽

Metal Gate Electrodes ◽

Metal Gate ◽

Fully Depleted ◽

Gate Electrodes ◽

Density Plasma

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Electron collisions with atoms, ions, molecules, and surfaces: Fundamental science empowering advances in technology

Proceedings of the National Academy of Sciences ◽

10.1073/pnas.1606132113 ◽

2016 ◽

Vol 113 (26) ◽

pp. 7026-7034 ◽

Cited By ~ 52

Author(s):

Klaus Bartschat ◽

Mark J. Kushner

Keyword(s):

Low Temperature ◽

Computational Methods ◽

Plasma Etching ◽

Recent Progress ◽

High Technology ◽

Remote Plasma ◽

Electron Collisions ◽

Benchmark Data ◽

Diode Pumped ◽

Low Temperature Plasmas

Electron collisions with atoms, ions, molecules, and surfaces are critically important to the understanding and modeling of low-temperature plasmas (LTPs), and so in the development of technologies based on LTPs. Recent progress in obtaining experimental benchmark data and the development of highly sophisticated computational methods is highlighted. With the cesium-based diode-pumped alkali laser and remote plasma etching of Si3N4 as examples, we demonstrate how accurate and comprehensive datasets for electron collisions enable complex modeling of plasma-using technologies that empower our high-technology–based society.

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