Dual‐function remote plasma etching/cleaning system applied to selective etching of SiO2 and removal of polymeric residues

1993 ◽  
Vol 11 (5) ◽  
pp. 2496-2507 ◽  
Author(s):  
T. Yasuda ◽  
G. Lucovsky
Keyword(s):  
Plasma Etching ◽  
Selective Etching ◽  
Dual Function ◽  
Remote Plasma ◽  
Cleaning System

scholarly journals Erratum: “Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si3N4 spacer etching” [J. Appl. Phys. 126, 243301 (2019)]

2020 ◽  
Vol 127 (16) ◽  
pp. 169902
Author(s):  
Vincent Renaud ◽  
Camille Petit-Etienne ◽  
Jean-Paul Barnes ◽  
Jérémie Bisserier ◽  
Olivier Joubert ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Selective Etching ◽  
Remote Plasma ◽  
Cycling Process

scholarly journals Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si3N4 spacer etching

2019 ◽  
Vol 126 (24) ◽  
pp. 243301 ◽  
Author(s):  
Vincent Renaud ◽  
Camille Petit-Etienne ◽  
Jean-Paul Barnes ◽  
Jérémie Bisserier ◽  
Olivier Joubert ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Selective Etching ◽  
Remote Plasma ◽  
Cycling Process

Optimizing remote plasma sources for selective etching

2016 ◽  
Author(s):  
Shuo Huang ◽  
Mark J. Kushner ◽  
Vladimir Volynets ◽  
Sangheon Lee ◽  
In-Cheol Song ◽  
...  
Keyword(s):  
Selective Etching ◽  
Remote Plasma ◽  
Plasma Sources

Integrated, Dual-Function Remote Plasma-Enhanced Processing Applied to Low Damage SiO2 Etching and Removal of C-F Polymer Residues

1992 ◽  
Vol 282 ◽  
Author(s):  
T. Yasuda ◽  
G. Lucovsky
Keyword(s):  
Low Temperature ◽  
Plasma Etching ◽  
Etch Rate ◽  
Low Energy ◽  
Rf Plasma ◽  
Dual Function ◽  
Homoepitaxial Growth ◽  
Plasma Excitation ◽  
A New Technique

ABSTRACTWe report a dual-function chamber integrating (a) remote RF plasma-enhanced etching of SiO2 layers on Si(100) surfaces with low energy, <100 eV, ion bombardment and (b) in-situ removal of polymeric C-F residues that are formed on the exposed Si surfaces. Using direct plasma excitation of He and downstream introduction of CF4, an SiO2 etch rate of ̃5 nm/min was obtained at a CF4 partial pressure as low as 0.25 mTorr. An exposure to atomic-H at a substrate temperature of 250°C was effective in removing polymeric residues from the Si surface, while an exposure to reactive O-species was less effective. We achieved a low-temperature, ̃300°C, homoepitaxial growth of Si on the Si(100) surface that was subjected to plasma etching followed by an exposure to atomic-H. The electrical damage of the processed Si surfaces was evaluated by a new technique, where a device-quality SiO2 film was deposited on this surface by remote PECVD and the C-V characteristics of the MOS structure were measured.

scholarly journals Electron collisions with atoms, ions, molecules, and surfaces: Fundamental science empowering advances in technology

2016 ◽  
Vol 113 (26) ◽  
pp. 7026-7034 ◽  
Author(s):  
Klaus Bartschat ◽  
Mark J. Kushner
Keyword(s):  
Low Temperature ◽  
Computational Methods ◽  
Plasma Etching ◽  
Recent Progress ◽  
High Technology ◽  
Remote Plasma ◽  
Electron Collisions ◽  
Benchmark Data ◽  
Diode Pumped ◽  
Low Temperature Plasmas

Electron collisions with atoms, ions, molecules, and surfaces are critically important to the understanding and modeling of low-temperature plasmas (LTPs), and so in the development of technologies based on LTPs. Recent progress in obtaining experimental benchmark data and the development of highly sophisticated computational methods is highlighted. With the cesium-based diode-pumped alkali laser and remote plasma etching of Si3N4 as examples, we demonstrate how accurate and comprehensive datasets for electron collisions enable complex modeling of plasma-using technologies that empower our high-technology–based society.

Remote plasma etching of titanium nitride using NF3/argon and chlorine mixtures for chamber clean applications

2007 ◽  
Vol 84 (1) ◽  
pp. 37-41 ◽  
Author(s):  
Ronald Hellriegel ◽  
Matthias Albert ◽  
Bernd Hintze ◽  
Hubert Winzig ◽  
J.W. Bartha
Keyword(s):  
Titanium Nitride ◽  
Plasma Etching ◽  
Remote Plasma
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