Remote plasma etching reactors: Modeling and experiment

1993 ◽  
Vol 11 (2) ◽  
pp. 206 ◽  
Author(s):  
Shashank C. Deshmukh
Keyword(s):  
Plasma Etching ◽  
Remote Plasma

scholarly journals Electron collisions with atoms, ions, molecules, and surfaces: Fundamental science empowering advances in technology

2016 ◽  
Vol 113 (26) ◽  
pp. 7026-7034 ◽  
Author(s):  
Klaus Bartschat ◽  
Mark J. Kushner
Keyword(s):  
Low Temperature ◽  
Computational Methods ◽  
Plasma Etching ◽  
Recent Progress ◽  
High Technology ◽  
Remote Plasma ◽  
Electron Collisions ◽  
Benchmark Data ◽  
Diode Pumped ◽  
Low Temperature Plasmas

Electron collisions with atoms, ions, molecules, and surfaces are critically important to the understanding and modeling of low-temperature plasmas (LTPs), and so in the development of technologies based on LTPs. Recent progress in obtaining experimental benchmark data and the development of highly sophisticated computational methods is highlighted. With the cesium-based diode-pumped alkali laser and remote plasma etching of Si3N4 as examples, we demonstrate how accurate and comprehensive datasets for electron collisions enable complex modeling of plasma-using technologies that empower our high-technology–based society.

Remote plasma etching of titanium nitride using NF3/argon and chlorine mixtures for chamber clean applications

2007 ◽  
Vol 84 (1) ◽  
pp. 37-41 ◽  
Author(s):  
Ronald Hellriegel ◽  
Matthias Albert ◽  
Bernd Hintze ◽  
Hubert Winzig ◽  
J.W. Bartha
Keyword(s):  
Titanium Nitride ◽  
Plasma Etching ◽  
Remote Plasma

Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures

1998 ◽  
Vol 16 (4) ◽  
pp. 2047-2056 ◽  
Author(s):  
B. E. E. Kastenmeier ◽  
P. J. Matsuo ◽  
G. S. Oehrlein ◽  
J. G. Langan
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Plasma Etching ◽  
Gas Mixtures ◽  
Remote Plasma

scholarly journals Erratum: “Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si3N4 spacer etching” [J. Appl. Phys. 126, 243301 (2019)]

2020 ◽  
Vol 127 (16) ◽  
pp. 169902
Author(s):  
Vincent Renaud ◽  
Camille Petit-Etienne ◽  
Jean-Paul Barnes ◽  
Jérémie Bisserier ◽  
Olivier Joubert ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Selective Etching ◽  
Remote Plasma ◽  
Cycling Process

Low Temperature SiGe Steam Oxide - Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner Spacer

2018 ◽  
Vol 282 ◽  
pp. 126-131
Author(s):  
Kurt Wostyn ◽  
Karine Kenis ◽  
Hans Mertens ◽  
Adrian Vaisman Chasin ◽  
Andriy Hikavyy ◽  
...  
Keyword(s):  
Low Temperature ◽  
Plasma Etching ◽  
Etch Rate ◽  
Electrical Breakdown ◽  
Breakdown Field ◽  
Integration Scheme ◽  
Remote Plasma ◽  
Thermal Oxide ◽  
Oxide Removal ◽  
Very High

For horizontally stacked nanowires or-sheets to compete with finFET, the development of a robust inner spacer module is essential. These inner spacers are required to reduce the parasitic capacitance due to the overlap between the source/drain and gate regions. Here we propose an inner spacer integration scheme for Si gate-all-around (GAA) taking advantage of the selective oxidation and oxide removal of SiGe versus Si. Compared to thermal oxide, we found a very high SiGe-oxide etch rate in aqueous HF solutions. When using an NH3/NF3remote plasma, a reduction in etch rate was found for SiGe-oxide versus thermal oxide. We show Si0.75Ge0.25-oxide meets inner spacer requirements for leakage current and electrical breakdown field and finally demonstrate the proposed inner spacer integration scheme using a fin-shaped SiGe/Si multilayer topological-test-structure.

Sign in / Sign up

Export Citation Format

Share Document