Effect of oxygen on fluorine‐based remote plasma etching of silicon and silicon dioxide

1988 ◽  
Vol 6 (3) ◽  
pp. 1984-1988 ◽  
Author(s):  
Lee M. Loewenstein
Keyword(s):  
Silicon Dioxide ◽  
Plasma Etching ◽  
Remote Plasma ◽  
Effect Of Oxygen

Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures

1998 ◽  
Vol 16 (4) ◽  
pp. 2047-2056 ◽  
Author(s):  
B. E. E. Kastenmeier ◽  
P. J. Matsuo ◽  
G. S. Oehrlein ◽  
J. G. Langan
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Plasma Etching ◽  
Gas Mixtures ◽  
Remote Plasma

Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2

1995 ◽  
Vol 67 (13) ◽  
pp. 1902-1904 ◽  
Author(s):  
J. Staffa ◽  
D. Hwang ◽  
B. Luther ◽  
J. Ruzyllo ◽  
R. Grant
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Remote Plasma

Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas

1978 ◽  
Vol 49 (7) ◽  
pp. 3796-3803 ◽  
Author(s):  
C. J. Mogab ◽  
A. C. Adams ◽  
D. L. Flamm
Keyword(s):  
Plasma Etching ◽  
Effect Of Oxygen

AES and XPS studies of surface films deposited during the plasma etching of silicon dioxide layers

1984 ◽  
Vol 6 (6) ◽  
pp. 267-273 ◽  
Author(s):  
C. G. Tuppen ◽  
R. Heckingbottom ◽  
M. Gill ◽  
C. Heslop ◽  
G. J. Davies
Keyword(s):  
Silicon Dioxide ◽  
Plasma Etching ◽  
Surface Films

Plasma Etching of Silicon Dioxide and Silicon Nitride with Non-Perfluorocompound Chemistries: Trifluoroacetic Anhydride and Iodofluorocarbons

1996 ◽  
Vol 447 ◽  
Author(s):  
Simon M. Karecki ◽  
Laura C. Pruette ◽  
L. Rafael Reif
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Plasma Etching ◽  
Etch Rate ◽  
Gas Flow ◽  
Sulfur Hexafluoride ◽  
Semiconductor Industry ◽  
Chemical Vapor ◽  
Trifluoroacetic Anhydride ◽  
Auger Electron Spectroscopy Data

AbstractPresently, the semiconductor industry relies almost exclusively on perfluorocompounds (e.g., tetrafluoromethane, hexafluoroethane, nitrogen trifluoride. sulfur hexafluoride, and. more recently, octafluoropropane) for the etching of silicon dioxide and silicon nitride films in wafer patterning and PECVD (plasma enhanced chemical vapor deposition) chamber cleaning applications. The use of perfluorocompounds (PFCs) by the industry is considered problematic because of the high global warming potentials (GWPs) associated with these substances. Potential replacements for perfluorocompounds are presently being evaluated at MIT. In an initial stage of the study, intended to screen potential candidates on the basis of etch performance, a large number of compounds is being tested in a commercially available magnetically enhanced reactive ion etch tool. The potential alternatives discussed in this work are trifluoroacetic anhydride (TFAA) and three members of the iodofluorocarbon (IFC) family – iodotrifluoromethane, iodopentafluorocthane, and 2-iodoheptafluoropropane. This paper will present the results of etch rate comparisons between TFAA and octafluoropropane, a perfluorinated dielectric etchant. Designed experiment (DOE) methodology, combined with neural network software, was used to study a broad parameter space of reactor conditions. The effects of pressure, magnetic field, and gas flow rates were studied. Additionally, more limited tests were carried out with the three iodofluorocarbon gases. Etch rate data, as well as Auger electron spectroscopy data from substrates exposed to IFC plasmas will be presented. All gases were evaluated using both silicon dioxide as well as silicon nitride substrates. Results indicate that these compounds may be potentially viable in plasma etching applications.

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