Room temperature deposition of silicon nitride films using very low frequency (50Hz) plasma CVD

1985 ◽  
Vol 14 (5) ◽  
pp. 573-586 ◽  
Author(s):  
M. Shimozuma ◽  
K. Kitamori ◽  
H. Ohno ◽  
H. Hasegawa ◽  
H. Tagashira
Keyword(s):  
Silicon Nitride ◽  
Room Temperature ◽  
Low Frequency ◽  
Plasma Cvd ◽  
Very Low Frequency ◽  
Silicon Nitride Films ◽  
Temperature Deposition

Low Hydrogen Content Silicon Nitride Films Deposited at Room Temperature with an ECR Plasma Source

2004 ◽  
Vol 151 (10) ◽  
pp. C649 ◽  
Author(s):  
Gratiela I. Isai ◽  
Jisk Holleman ◽  
Hans Wallinga ◽  
Pierre H. Woerlee
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Content ◽  
Room Temperature ◽  
Plasma Source ◽  
Ecr Plasma ◽  
Silicon Nitride Films

Properties of CAT-CVD Silicon Nitride Films and Their Application as Passivation Films

1996 ◽  
Vol 446 ◽  
Author(s):  
Shinya Okada ◽  
Hideki Matsumura
Keyword(s):  
High Temperature ◽  
Silicon Nitride ◽  
Gaseous Mixture ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Plasma Cvd ◽  
New Device ◽  
Silicon Nitride Films ◽  
Chemical Etch ◽  
Substrate Temperatures

AbstractSilicon nitride (SiNx) films have been successfully synthesized by the catalytic chemical vapor deposition (cat-CVD) method using a gaseous mixture of silane (SiH4) and ammonia (NH3). In the method, the deposition gases are decomposed by catalytic cracking reactions with a high temperature (1700°C) catalyzer near the substrates, and SiNx films can be deposited at substrate temperatures lower than 400°C without using plasma or photochemical excitation. Nearly stoichiometric Si3N4 films are formed when the flow ratio of NH3 exceeds over 100 times of that of SiH4. These cat-CVD SiNx films show excellent properties. That is, the resistivity, the breakdown voltage, the chemical etch resistance and hydrogen content in the films are almost equivalent to those of high-temperature thermal CVD films. In addition, the surface diffusion length of depositing species is about several-tens μπι and step-coverage itself is conformai. Thus, the cat-CVD SiNx films are regarded not only as a new device passivation films superior to the conventional plasma-CVD films but as a gate insulator for electon devices due to their high quality.

Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD

1989 ◽  
Vol 28 (Part 2, No. 12) ◽  
pp. L2316-L2319 ◽  
Author(s):  
Nobumasa Suzuki ◽  
Toshiaki Yoshikawa ◽  
Kazuya Masu ◽  
Kazuo Tsubouchi ◽  
Nobuo Mikoshiba
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Content ◽  
Stoichiometric Composition ◽  
Plasma Cvd ◽  
Silicon Nitride Films

scholarly journals Improvement of Silicon Nitride Film Deposition Rate by Low Frequency Double Plasma CVD Methode.

Shinku ◽  
1991 ◽  
Vol 34 (4) ◽  
pp. 427-431
Author(s):  
Mitsuo. SHIMOZUMA ◽  
Jin. MURAKAMI ◽  
Gen. TOCHITANI ◽  
Takashi. TSUJI ◽  
Hiroaki. TAGASHIRA
Keyword(s):  
Silicon Nitride ◽  
Deposition Rate ◽  
Low Frequency ◽  
Film Deposition ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Plasma Cvd ◽  
Film Deposition Rate

Ion Beam Analysis of the Concentration and Thermal Release of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD Method

1988 ◽  
Vol 27 (Part 1, No. 8) ◽  
pp. 1406-1410 ◽  
Author(s):  
Takashi Kuroi ◽  
Kenji Umezawa ◽  
Junji Yamane ◽  
Fumiya Shoji ◽  
Kenjiro Oura ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ion Beam ◽  
Plasma Cvd ◽  
Ion Beam Analysis ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Thermal Release ◽  
Silicon Nitride Films ◽  
Beam Analysis
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