Properties of CAT-CVD Silicon Nitride Films and Their Application as Passivation Films

1996 ◽  
Vol 446 ◽  
Author(s):  
Shinya Okada ◽  
Hideki Matsumura
Keyword(s):  
High Temperature ◽  
Silicon Nitride ◽  
Gaseous Mixture ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Plasma Cvd ◽  
New Device ◽  
Silicon Nitride Films ◽  
Chemical Etch ◽  
Substrate Temperatures

AbstractSilicon nitride (SiNx) films have been successfully synthesized by the catalytic chemical vapor deposition (cat-CVD) method using a gaseous mixture of silane (SiH4) and ammonia (NH3). In the method, the deposition gases are decomposed by catalytic cracking reactions with a high temperature (1700°C) catalyzer near the substrates, and SiNx films can be deposited at substrate temperatures lower than 400°C without using plasma or photochemical excitation. Nearly stoichiometric Si3N4 films are formed when the flow ratio of NH3 exceeds over 100 times of that of SiH4. These cat-CVD SiNx films show excellent properties. That is, the resistivity, the breakdown voltage, the chemical etch resistance and hydrogen content in the films are almost equivalent to those of high-temperature thermal CVD films. In addition, the surface diffusion length of depositing species is about several-tens μπι and step-coverage itself is conformai. Thus, the cat-CVD SiNx films are regarded not only as a new device passivation films superior to the conventional plasma-CVD films but as a gate insulator for electon devices due to their high quality.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Plasma enhanced chemical vapor deposition of silicon nitride films from a metal-organic precursor

1994 ◽  
Vol 9 (12) ◽  
pp. 3019-3021 ◽  
Author(s):  
David M. Hoffman ◽  
Sri Prakash Rangarajan ◽  
Satish D. Athavale ◽  
Shashank C. Deshmukh ◽  
Demetre J. Economou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Organic Precursor ◽  
Silicon Nitride Films ◽  
Metal Organic ◽  
Substrate Temperatures ◽  
Uniform Composition

Silicon nitride films are grown by plasma enhanced chemical vapor deposition from tetrakis(dimethylamido)silicon, Si(NMe2)4, and ammonia precursors at substrate temperatures of 200-400 °C. Backscattering spectrometry shows that the films are close to stoichiometric. Depth profiling by Auger electron spectroscopy shows uniform composition and no oxygen or carbon contamination in the bulk. The films are featureless by scanning electron microscopy under 100,000X magnification.

Low Temperature Formation of Silicon Nitride Film: Combination of Catalytic-Nitridation and Catalytic-CVD

2002 ◽  
Vol 715 ◽  
Author(s):  
A. Izumi ◽  
A. Kikkawa ◽  
H. Matsumura
Keyword(s):  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Silicon Nitride Films ◽  
Voltage Curve ◽  
Capacitance Voltage ◽  
Injection Type ◽  
Substrate Temperatures

AbstractIn this work silicon nitride films are formed as substrate temperatures 250°C by combination of catalytic-nitridation and catalytic-vapor deposition method in a catalytic chemical vapor deposition system. It is found that inserting nitridation layer about 2 nm-thick before growing the silicon nitride films, injection-type hysteresis of capacitance-voltage curve is drastically reduced from 1.4 V to 0.05 V for 40 nm-thick SiNx.

Low‐temperature low‐stress silicon nitride for optoelectronic Applications prepared by electron cyclotron resonance plasma Chemical‐vapor deposition

1996 ◽  
Vol 446 ◽  
Author(s):  
S. Belkouch ◽  
D. Landheer ◽  
R. Taylor ◽  
K. Rajesh ◽  
G. I. Sproule
Keyword(s):  
Silicon Nitride ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Nitride Films ◽  
Waveguide Loss ◽  
Substrate Temperatures ◽  
Resonance Plasma

AbstractSilicon nitride films have been deposited with a single‐magnet electron‐resonance deposition system using nitrogen and silane as the reaction gases at substrate temperatures of 110°C and 300°C. The films are slightly nitrogen‐rich with no measurable Si‐H bonds measurable by Fourier Transform infrared spectroscopy and the concentration of hydrogen present as N‐H bonds increases with increasing SiH4/N2. The stress levels in the films can be controlled from tensile to compressive by decreasing the SiH4/N2 flow ratio and very low stress can be obtained with N‐H bond concentrations of 4 at. %. The optical bandgap for the layer with the lowest stress value (‐11.5 MPa), deposited at 300°C was 4.9 eV, as determined from a taue plot, and the waveguide loss at 632.8 nm was 2.3 dB/cm for 500 nm thick film deposited on fused silica.

Ultra-Thin High Quality Silicon Nitride Gate Dielectrics Prepared by Catalytic Chemical Vapor Deposition at Low Temperatures

1999 ◽  
Vol 567 ◽  
Author(s):  
Hidekazu Sato ◽  
Akira Izumi ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Hysteresis Loop ◽  
Vapor Deposition ◽  
Catalytic Cracking ◽  
Gaseous Mixture ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Cvd Method

ABSTRACTThis is to report the feasibility of ultra-thin silicon nitride (SiNx) films, prepared by catalytic chemical vapor deposition (Cat-CVD) method, as an ultra-thin gate insulator. In the Cat-CVD method, the deposition gases such as a gaseous mixture of silane (SiH4) and ammonia (NH 3) are decomposed by catalytic cracking reactions with a heated tungsten catalyzer placed near substrates, and SiNx films are formed at substrate temperatures around 300°C without using plasma. In the paper, additionally the effect of post-deposited treatments by using NH3-decomposed species or hydrogen (H2)-decomposed species formed by catalytic cracking of NH3 and H2 are also studied. It is found that a small hysteresis loop is seen in the C-V curve of as-deposited Cat-CVD SiNx films and that the leakage currents with thickness of 3nm equivalent oxide thickness (EOT) is slightly larger than that in the conventional thermal SiO2 of similar EOT. However, it is also found that the properties of Cat-CVD SiNx films are drastically improved by the post-deposited H2 or NH3 treatments, that is, the hysteresis loop disappears and the leakage current decreases by three orders of magnitude.

scholarly journals Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Peak Position ◽  
Excitation Wavelength ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

scholarly journals Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition

1995 ◽  
Vol 77 (12) ◽  
pp. 6534-6541 ◽  
Author(s):  
Sadanand V. Deshpande ◽  
Erdogan Gulari ◽  
Steven W. Brown ◽  
Stephen C. Rand
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Hot Filament
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