Low Hydrogen Content Silicon Nitride Films Deposited at Room Temperature with an ECR Plasma Source

2004 ◽  
Vol 151 (10) ◽  
pp. C649 ◽  
Author(s):  
Gratiela I. Isai ◽  
Jisk Holleman ◽  
Hans Wallinga ◽  
Pierre H. Woerlee
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Content ◽  
Room Temperature ◽  
Plasma Source ◽  
Ecr Plasma ◽  
Silicon Nitride Films

Deposition of Fluorinated Silicon Nitride using Plasma Enhanced Chemical Vapor Deposition Technique

1991 ◽  
Vol 219 ◽  
Author(s):  
Ibrahim Khan ◽  
H. A. Naseem ◽  
S. S. Ang ◽  
W. D. Brown
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Content ◽  
Electronic Devices ◽  
Chemical Vapor ◽  
Dielectric Strength ◽  
Optical And Electrical Properties ◽  
High Hydrogen ◽  
Optical Gap ◽  
Silicon Nitride Films ◽  
Vapor Deposition Technique

ABSTRACTHigh hydrogen content of ammonia/silane deposited silicon nitride films has been linked to instability in electronic devices such as MOSFET's MNOSFET's and TFT's. Fluorine has been proposed to help reduce the hydrogen content of these films. In this work, NF3 was used as a fluorinating agent. Optical and electrical properties were studied as a function of NF3 flow rate. A maximum optical gap of 5.3 eV was obtained with NF3 as compared to 3.2 eV without. The dielectric strength improved from 4 to 10 MV/cm with the addition of NF3. FTIR data show that the Si-N peak shifts to higher wave numbers and the Si-H peak drops below the detection limit with the addition of NF3. Also, the broad Si-N peak at 850 cm-1 is composed of many individual peaks which become discernable when a stainless steel screen is placed in front of the substrate. As the NF3 concentration is increased, a new peak at 1030–1060 cm-1 appears. This may be associated with a N-F vibration (1030 cm-1).

Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD

1989 ◽  
Vol 28 (Part 2, No. 12) ◽  
pp. L2316-L2319 ◽  
Author(s):  
Nobumasa Suzuki ◽  
Toshiaki Yoshikawa ◽  
Kazuya Masu ◽  
Kazuo Tsubouchi ◽  
Nobuo Mikoshiba
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Content ◽  
Stoichiometric Composition ◽  
Plasma Cvd ◽  
Silicon Nitride Films

Ion Beam Analysis of the Concentration and Thermal Release of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD Method

1988 ◽  
Vol 27 (Part 1, No. 8) ◽  
pp. 1406-1410 ◽  
Author(s):  
Takashi Kuroi ◽  
Kenji Umezawa ◽  
Junji Yamane ◽  
Fumiya Shoji ◽  
Kenjiro Oura ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ion Beam ◽  
Plasma Cvd ◽  
Ion Beam Analysis ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Thermal Release ◽  
Silicon Nitride Films ◽  
Beam Analysis

Effect of the hydrogen content in the optical properties and etching of silicon nitride films deposited by PECVD for uncooled microbolometers

2005 ◽  
Vol 862 ◽  
Author(s):  
R. Ambrosio ◽  
A. Torres ◽  
A. Kosarev ◽  
M. Landa ◽  
A. Heredia
Keyword(s):  
Hydrogen Bonding ◽  
Silicon Nitride ◽  
Hydrogen Content ◽  
Etch Rate ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Quantitative Results ◽  
Deposited Films

AbstractWe have studied silicon nitride films a-SiN:H deposited at a substrate temperature of 350°C by means of the Low frequency (LF) PECVD from silane and nitrogen as stock gases. Film properties as hydrogen bonding and content, nitrogen content, refractive index and etch rate are reported and analyzed. Our deposited films show physical properties similar to those that are obtained deposition temperatures of 700°C by the low pressure chemical vapor deposition (LPCVD) technique. An investigation of bonding structures for the deposited films was performed, and quantitative results for hydrogen bonding based on Fourier Transform Infrared (FTIR) analysis are presented. It was observed that low hydrogen content in the films is in good correlation with low etch rate in 10% buffered HF solution, therefore these films present a material with good etch selectivity in respect to others materials (as phosphosilicate glass PSG, Al etc). Selectivity which makes these films very promising in surface micromachining for fabrication of sensors and device structures, e.g. microbolometers. Additionally, the Si-N bond at 830-840cm-1was analyzed because of its big absorption produced at 12μm; therefore these films can be used as absorber layers in uncooled microbolometres.

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